INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU706D
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 700V(Min)
·High
Switching Speed
·Built-in
Integrated Diode
APPLICATIONS
·Designed
for use in horizontal deflection circuits of color TV
receivers and line operated switch-mode applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector- Emitter Voltage V
BE
=0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
700
6
5
8
3
5
100
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.25
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU706D
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A ;I
B
= 0; L=25 mH
B
700
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 1.33A
B
5.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 3A; I
B
= 1.33A
B
1.3
0.5
1.0
10
V
I
CES
Collector Cutoff Current
V
CE
= V
CESmax
;V
BE
= 0
V
CE
= V
CESmax
;V
BE
= 0; T
J
= 125℃
V
EB
= 6V; I
C
=0
mA
I
EBO
Emitter Cutoff Current
mA
h
FE
DC Current Gain
I
C
= 3A; V
CE
= 5V
2.25
V
ECF
C-E Diode Forward Voltage
I
F
= 3A
1.5
2.2
V
I
S/B
Second Breakdown Current
V
CE
= 300V; t
p
= 200μs
1.0
A
Switching Times
t
f
Fall Time
I
C
= 3A; I
B(
end
)
= 1A; L
B
= 12μH
0.7
μs
t
s
Storage Time
6.5
μs
isc Website：www.iscsemi.cn
2
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