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HSMS-2811L30

Description
Mixer Diode, Silicon
CategoryDiscrete semiconductor    diode   
File Size158KB,6 Pages
ManufacturerHewlett Packard Co.
Download Datasheet Parametric View All

HSMS-2811L30 Overview

Mixer Diode, Silicon

HSMS-2811L30 Parametric

Parameter NameAttribute value
MakerHewlett Packard Co.
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage20 V
ConfigurationSINGLE
Maximum diode capacitance1.2 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Pulse input maximum power0.25 W
Certification statusNot Qualified
Maximum reverse current0.2 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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