BYG10D THRU BYG10M
Silicon Mesa SMD Rectifier
200V-1000V
1.5A
FEATURES
D
D
D
D
D
Controlled avalanche characteristics
Glass passivated junction
Low reverse current
High surge current capability
Wave and reflow solderable
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
Type
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
Symbol
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FAV
T
j
=T
stg
I
(BR)R
=1A, T
j
=25
°
C
E
R
Value
200
400
600
800
1000
30
1.5
–55...+150
20
Unit
V
V
V
V
V
A
A
°
C
mJ
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
t
p
=10ms,
half sinewave
Maximum Thermal Resistance
Parameter
Test Conditions
Junction lead
T
L
=const.
Junction ambient mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm
2
35
m
m Cu
mounted on Al–oxid–ceramic (Al
2
O
3
), 50mm
2
35
m
m Cu
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
Parameter
Forward voltage
g
Reverse current
Reverse recovery time
Test Conditions
I
F
=1A
I
F
=1.5A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Type
Symbol
V
F
V
F
I
R
I
R
t
rr
Min
Typ
Max
1.1
1.15
1
10
4
Unit
V
V
m
A
m
A
m
s
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Web Site: www.taychipst.com
BYG10D THRU BYG10M
Silicon Mesa SMD Rectifier
200V-1000V
1.5A
RATINGS AND CHARACTERISTIC CURVES
100
I
R
– Reverse Current (
m
A )
I
F
– Forward Current ( A )
100
BYG10D THRU BYG10M
10
10
T
j
= 125°C
1
T
j
= 75°C
0.1
T
j
= 25°C
0
0.6
1.2
1.8
2.4
3.0
1
0.1
V
R
= V
R RM
0.01
0
40
80
120
160
200
0.01
T
j
– Junction Temperature (
°C
)
94 9284
94 9180
V
F
– Forward Voltage ( V )
Figure 1. Typ. Reverse Current vs. Junction Temperature
Figure 3. Typ. Forward Current vs. Forward Voltage
5000
I
FAV
– Average Forward Current ( A )
t
rr
– Reverse Recovery Time ( ns )
2.0
1.6
1.2
100K/W
0.8
0.4
150K/W
0
0
40
80
120
160
200
125K/W
R
thJA
=25K/W
T
amb
= 125°C
4000
T
amb
= 100°C
3000
T
amb
= 75°C
2000
1000
I
R
=0.5A, i
R
=0.125A
0
0
0.2
0.4
0.6
0.8
1.0
T
amb
= 50°C
T
amb
= 25°C
94 9179
T
amb
– Ambient Temperature (
°C
)
94 9544
I
F
– Forward Current ( A )
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
Figure 4. Typ. Reverse Recovery Time vs.
Forward Current
1000
125K/W DC
100
t
p
/T=0.5
t
p
/T=0.2
10
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
t
p
/T=0.01
1
10
–5
10
–4
10
–3
10
–2
10
–1
10
0
10
1
10
2
Single Pulse
94 9339
t
p
– Pulse Length ( s )
Figure 5. Thermal Response
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