BYG20D THRU BYG20J
Fast Silicon Mesa SMD Rectifier
200V-600V
1.5A
FEATURES
D
D
D
D
D
D
Glass passivated junction
Low reverse current
Soft recovery characteristics
Fast reverse recovery time
Good switching characteristics
Wave and reflow solderable
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Test Conditions
Type
BYG20D
BYG20G
BYG20J
Symbol
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FAV
T
j
=T
stg
I
(BR)R
=1A, T
j
=25
°
C
E
R
Value
200
400
600
30
1.5
–55...+150
20
Unit
V
V
V
A
A
°
C
mJ
t
p
=10ms,
half sinewave
Maximum Thermal Resistance
Parameter
Test Conditions
Junction lead
T
L
=const.
Junction ambient mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm
2
35
m
m Cu
mounted on Al–oxid–ceramic (Al
2
O
3
), 50mm
2
35
m
m Cu
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
Parameter
Forward voltage
g
Reverse current
Reverse recovery time
Test Conditions
I
F
=1A
I
F
=1.5A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Type
Symbol
V
F
V
F
I
R
I
R
t
rr
Min
Typ
Max
1.3
1.4
1
10
75
Unit
V
V
m
A
m
A
ns
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
BYG20D THRU BYG20J
Fast Silicon Mesa SMD Rectifier
200V-600V
1.5A
RATINGS AND CHARACTERISTIC CURVES
100
I
R
– Reverse Current (
m
A )
I
F
– Forward Current ( A )
BYG20D THRU BYG20J
100
10
10
T
j
= 125°C
1
T
j
= 75°C
0.1
T
j
= 25°C
0
1
2
3
4
1
0.1
V
R
= V
R RM
0.01
0
40
80
120
160
200
0.01
T
j
– Junction Temperature (
°C
)
94 9342
94 9341
V
F
– Forward Voltage ( V )
Figure 1. Typ. Reverse Current vs. Junction Temperature
Figure 3. Max. Forward Current vs. Forward Voltage
600
I
FAV
– Average Forward Current ( A )
t
rr
– Reverse Recovery Time ( ns )
2.0
1.6
1.2
0.8
0.4
0
0
40
150K/W
80
120
160
200
100K/W
125K/W
R
thJA
=25K/W
I
R
=0.5A, i
R
=0.125A
500
400
300
200
100
0
0
0.2
0.4
0.6
0.8
1.0
T
amb
= 125°C
100°C
75°C
50°C
25°C
94 9340
T
amb
– Ambient Temperature (
°C
)
94 9343
I
F
– Forward Current ( A )
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
Figure 4. Max. Reverse Recovery Time vs.
Forward Current
1000
125K/W DC
100
t
p
/T=0.5
t
p
/T=0.2
10
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
t
p
/T=0.01
1
10
–5
10
–4
10
–3
10
–2
10
–1
10
0
10
1
10
2
Single Pulse
94 9339
t
p
– Pulse Length ( s )
Figure 5. Thermal Response
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
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