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BYG20H

Description
DIODE AVALANCH 200V 1.5A DO214AC
Categorysemiconductor    Discrete semiconductor   
File Size100KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BYG20H Overview

DIODE AVALANCH 200V 1.5A DO214AC

BYG20D, BYG20G, BYG20J
www.vishay.com
Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
Available
• Soft recovery characteristics
• Ultrafast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMA
(DO-214AC)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
t
rr
E
R
T
J
max.
Package
Circuit configuration
1.5 A
200 V, 400 V, 600 V
30 A
1.0 μA
1.4 V
75 ns
20 mJ
150 °C
SMA (DO-214AC)
Single
For use in high frequency rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case:
SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test
Polarity:
color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse
voltage
Average forward current
Peak forward surge current 10 ms single half sine-wave superimposed on
rated load
Pulse energy in avalanche mode, non repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
J
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG20D
BYG20D
200
BYG20G
BYG20G
400
1.5
30
20
-55 to +150
BYG20J
BYG20J
600
V
A
A
mJ
°C
UNIT
Revision: 01-Aug-2018
Document Number: 88958
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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