LS358(TO-78) datasheet, PDF - EEWORLD Datasheet

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LS358(TO-78): DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size291KB，1 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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LS358(TO-78) Overview

Transistor

LS358(TO-78) Parametric

Parameter Name	Attribute value
Maker	Micross
package instruction	,
Reach Compliance Code	compliant

LS358(TO-78) Preview

LS358

MONOLITHIC DUAL

PNP TRANSISTOR

Linear Systems Log Conformance Monolithic Dual PNP

The LS358 is a monolithic pair of PNP transistors

mounted in a single TO-78 package. The monolithic

dual chip design reduces parasitics and is ideal for use

in logging applications. See LS318 for NPN.

The hermetically sealed TO-78 is well suited for hi-rel

and harsh environment applications.

(See Packaging Information).

LS358 Features:

Tight matching

Low Output Capacitance

FEATURES

LOG CONFORMANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation (One side)

Continuous Power Dissipation (Both sides)

Linear Derating factor (One side)

Linear Derating factor (Both sides)

Maximum Currents

Collector Current

MIN

‐‐

TYP

0.4

‐‐

MAX

0.5

‐‐

UNITS

µV/°C

nA/°C

∆re

= 1.5Ω

‐65°C to +200°C

‐55°C to +150°C

250mW

500mW

2.3mW/°C

4.3mW/°C

10mA

CONDITIONS

= 10µA, V

= 5V

= 10µA, V

= 5V

= ‐55°C to +125°C

= 10µA, V

= 5V

= 10µA, V

= 5V

= ‐55°C to +125°C

= 10µA, V

= 5V

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

BE1

– V

BE2

Base Emitter Voltage Differential

∆|(V

BE1

– V

BE2

)| / ∆T

Base Emitter Voltage Differential

Change with Temperature

– I

Base Current Differential

|∆ (I

– I

)|/°C

Base Current Differential

Change with Temperature

FE1

FE2

DC Current Gain Differential

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTICS

MIN.

∆re

Log Conformance

‐‐

CBO

Collector to Base Voltage

CEO

Collector to Emitter Voltage

EBO

Emitter‐Base Breakdown Voltage

6.2

CCO

Collector to Collector Voltage

100

DC Current Gain

100

(SAT)

Collector Saturation Voltage

‐‐

EBO

Emitter Cutoff Current

‐‐

CBO

Collector Cutoff Current

‐‐

OBO

Output Capacitance

‐‐

C1C2

Collector to Collector Capacitance

‐‐

C1C2

Collector to Collector Leakage Current

‐‐

Current Gain Bandwidth Product

200

Narrow Band Noise Figure

‐‐

Click To Buy

TYP.

‐‐

MAX.

1.5

‐‐

600

‐‐

0.5

0.2

0.5

‐‐

UNITS

MHz

CONDITIONS

= 10‐100‐1000µA, V

= 5V

= 10µA, I

= 0

= 10µA, I

= 0

= 10µA, I

= 0

= 10µA, I

= 0

= 10µA, V

= 5V

= 100µA, V

= 5V

= 1mA, V

= 5V

= 1mA, I

= 0.1mA

= 0, V

= 3V

= 0, V

= 15V

= 0, V

= 5V

= 0V

= ±45V

= 1mA, V

= 5V

= 100µA, V

= 5V, BW=200Hz, R

= 10KΩ,

f = 1KHz

Notes:

1. Absolute Maximum ratings are limiting values above which serviceability may be impaired

2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.

TO-78 (Bottom View)

Available Packages:

LS358 in TO-78

LS358 available as bare die

Please contact Micross for full package and die dimensions:

Email:

chipcomponents@micross.com

Web:

www.micross.com/distribution.aspx

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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