BYS12-90
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 1.0 A
T
J
max.
Package
Diode variations
1.5 A
90 V
40 A
0.75 V
150 °C
DO-214AC (SMA)
Single die
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
Matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Junction and storage temperature range
8.3 ms
10 ms
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
BYS12-90
BYS 209
90
1.5
40
30
10 000
-55 to +150
V
A
A
V/μs
°C
UNIT
Revision: 23-Dec-14
Document Number: 88950
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYS12-90
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 1.0 A
I
F
= 15 mA
V
RRM
T
J
= 25 °C
T
J
= 25 °C
T
J
= 100 °C
SYMBOL
V
F
I
R
BYS12-90
750
360
100
1
UNIT
mV
μA
mA
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
(1)
Maximum DC reverse current
(1)
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance, junction to lead
Maximum thermal resistance, junction to ambient
SYMBOL
R
JL
R
JA
R
JA
(1)
(2)
BYS12-90
25
150
125
100
UNIT
°C/W
°C/W
R
JA
(3)
Notes
Mounted on epoxy-glass hard tissue
(2)
Mounted on epoxy-glass hard tissue, 50 mm
2
35 μm Cu
(3)
Mounted on Al-oxide-ceramic (Al O ), 50 mm
2
35 μm Cu
2 3
(1)
ORDERING INFORMATION
(Example)
PREFERRED P/N
BYS12-90-E3/TR
BYS12-90-E3/TR3
BYS12-90HE3/TR
(1)
BYS12-90HE3/TR3
(1)
BYS12-90HE3_A/H
(1)
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
0.064
0.064
PREFERRED PACKAGE CODE
TR
TR3
TR
TR3
H
I
BASE QUANTITY
1800
7500
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
BYS12-90HE3_A/I
(1)
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
1.6
T
J
= 150 °C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0
20
40
60
80
100
120
140
160
R
thJA
≤
K/W
V
R
= V
RRM
Half Sine-Wave
Instantaneous Forward Current (A)
T
J
= 125 °C
1
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Revision: 23-Dec-14
Document Number: 88950
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYS12-90
www.vishay.com
Vishay General Semiconductor
2500
2.2
Average Forward Current (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
40
125 K/W
V
R
= 0 V, Half Sine-Wave
Reverse Power Dissipation (mW)
2.0
V
R
= V
RRM
2000
R
thJA
= 25 K/W
100 K/W
1500
P
R
- Limit
at 100 % V
R
1000
500
150 K/W
0
80
120
160
200
25
50
75
100
125
150
Ambient Temperature (°C)
Junction Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
100 000
V
R
= V
RRM
10 000
180
160
f = 1 MHz
Diode Capacitance (pF)
25
50
75
100
125
150
Reverse Current (µA)
140
120
100
80
60
40
20
1000
100
0
0.1
1
10
100
Junction Temperature (°C)
Reverse Voltage (V)
Fig. 4 - Reverse Current vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 23-Dec-14
Document Number: 88950
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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