LS318
LOG CONFORMANCE
MONOLITHIC DUAL
NPN
TRANSISTORS
FEATURES
LOG CONFORMANCE
re =1 TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
(T
A
= 25°C unless otherwise noted)
I
C
Collector-Current
10mA
-55°C to +150°C
-55°C to +150°C
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation T
A
=25°C
Linear Derating Factor
TO 71 & TO 78
TOP VIEW
SYMBOL
re
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
h
FE
h
FE
V
CE
(SAT)
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
CHARACTERISTIC
Log Conformance
Collector-Base Breakdown Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
LS318
1.5
25
25
6.0
45
150
600
150
600
150
0.25
0.2
0.2
1.8
1.8
0.5
220
3
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MAX.
MAX.
UNITS CONDITIONS
Ω
V
V
V
V
I
C
= 10-100-1000µA
I
C
= 10µA
I
C
= 100µA
I
E
= 10µA
I
C
= 10µA
I
C
= 10µA
I
C
= 100µA
I
C
= 1mA
V
nA
nA
pF
pF
µA
MHz
dB
I
C
= 1mA
I
E
= 0A
I
C
= 0A
I
E
= 0A
V
CC
= 0V
V
CC
= ±45V
I
E
= 0A
I
B
= 0A
I
C
= 0A
NOTE 2
I
B
= I
E
=0A
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
I
B
= 0.1 mA
V
CB
= 20V
V
EB
= 3V
V
CB
= 3V
f=1MHz
I
B
= I
E
= 0A
f=1MHz
V
CE
= 5V
I
C
= 1mA
V
CE
= 5V
I
C
= 100µA V
CE
= 5V
BW = 200Hz, R
G
= 10 K
f=1KHz
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201118 06/20/2013 Rev#A7 ECN# LS318
SYMBOL
│V
BE1
-V
BE2
│
│(V
BE1
-V
BE2)
│/ºC
│I
B1
-I
B2
│
│(I
B1
-I
B2
)│/ºC
h
FE1
/h
FE2
CHARACTERISTIC
Base Emitter Voltage Differential
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
Base Current Differential
Change with Temperature
DC Current Gain Differential
LS318
0.4
1
1
10
0.4
5
TYP.
MAX.
TYP.
MAX.
TYP.
TYP.
UNITS CONDITIONS
mV
mV
µV/°C
nA
nA/ºC
%
I
C
= 10 µA
I
C
= 10 µA
I
C
= 10 µA
I
C
= 10 µA
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
T
A
= -55°C to +125°C
I
C
= 10 µA
V
CE
= 5V
T
A
= -55°C to +125°C
C1
B1
0.210
0.170
C2
B2
E2
N/C
E1
N/C
C1
B1
E1
N/C
C2
B2
E2
N/C
Note: All Dimensions in inches
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201118 06/20/2013 Rev#A7 ECN# LS318
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