BYT13-600 THRU BYT13-1000
FAST RECOVERY RECTIFIER DIODES
600V-1000V
3.0A
FEATURES
D
D
D
D
D
High efficiency
Low power losses
Very low switching losses
Low reverse current
High surge capability
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
(limiting values)
Symbol
I
FRM
I
F (AV)
I
FSM
P
tot
T
stg
T
j
T
L
Parameter
Repetive Peak Forward Current
Average Forward Current *
Surge non Repetitive Forward Current
Power Dissipation *
Storage and Junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
t
p
≤
20µs
T
a =
55°C
δ
= 0.5
t
p
= 10ms
Sinusoidal
T
a
=
55°C
Value
50
3
100
3.75
- 40 to + 150
- 40 to + 150
230
Unit
A
A
A
W
°C
°C
Symbol
V
RRM
Parameter
600
Repetitive Peak Reverse Voltage
600
BYT 13-
800
800
1000
1000
Unit
V
THERMAL RESISTANCE
Symbol
R
th (j - a)
Junction-ambient*
Parameter
Value
25
Unit
°C/W
STATIC CHARACTERISTICS
Synbol
I
R
V
F
T
j
= 25°C
T
j
= 25°C
Test Conditions
V
R
= V
RRM
I
F
= 3A
Min.
Typ.
Max.
20
1.3
Unit
µA
V
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
BYT13-600 THRU BYT13-1000
FAST RECOVERY RECTIFIER DIODES
600V-1000V
3.0A
RATINGS AND CHARACTERISTIC CURVES
F i gu re 1. Max i mum ave ra ge p ower
dissipation versus average forward current.
BYT13-600 THRU BYT13-1000
Figure 2. Average forward current versus
ambient temperature.
Figure 3. Thermal resistance versus lead
length.
Figure 5. Peak forward current
versus peak forward voltage drop
(maximum values).
Figure 4. Transient thermal impedance
junction-ambient for mounting n°2 versus
pulse duration (L = 10 mm).
Web Site: www.taychipst.com
E-mail: sales@taychipst.com
2 of 2
Microcontroller MCU
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