BLU6H0410L-600P;
BLU6H0410LS-600P
Power LDMOS transistor
Rev. 2 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for radar transmitter applications and industrial
applications in the frequency range of 400 MHz to 900 MHz.
Table 1.
Application information
Typical RF performance at V
DS
= 50 V; in a common source 860 MHz narrowband test circuit;
unless otherwise specified.
Test signal
pulsed, class-AB
[1]
[1]
f
(MHz)
860
I
Dq
(mA)
1.3
P
L(AV)
(W)
-
P
L(M)
(W)
600
G
p
(dB)
20
D
(%)
58
IMD3
(dBc)
-
Measured at
= 10 %; t
p
= 1 ms.
1.2 Features and benefits
Excellent ruggedness (VSWR
40 : 1 through all phases)
Optimum thermal behavior and reliability, R
th(j-c)
= 0.15 K/W
High power gain
High efficiency
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Power amplifier for radar transmitter applications in the 400 MHz to 900 MHz
frequency range
NXP Semiconductors
BLU6H0410L(S)-600P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLU6H0410L-600P (SOT539A)
1
2
5
3
3
4
4
5
1
2
sym117
BLU6H0410LS-600P (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLU6H0410L-600P
BLU6H0410LS-600P
-
-
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic
package; 4 leads
Version
SOT539A
SOT539B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
110
+11
+150
200
Unit
V
V
C
C
BLU6H0410L-600P_6H0410LS-600P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 12 July 2013
2 of 15
NXP Semiconductors
BLU6H0410L(S)-600P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
Z
th(j-c)
Thermal characteristics
Conditions
[1]
Symbol Parameter
transient thermal impedance from
junction to case
Typ
0.15
Unit
K/W
thermal resistance from junction to case T
j
= 150
C
T
j
= 150
C
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 500
s;
= 10 %
t
p
= 100
s;
= 20 %
0.020 K/W
0.023 K/W
0.025 K/W
0.028 K/W
0.035 K/W
[1]
R
th(j-c)
is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
C
iss
C
oss
C
rss
[1]
[2]
Conditions
V
GS
= 0 V; I
D
= 2.4 mA
V
DS
= 10 V; I
D
= 240 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 8.5 A
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
[1]
[1]
[1]
Min Typ Max Unit
110 -
1.4
-
-
-
-
-
-
-
1.9
-
36
-
-
2.4
2.8
-
280
V
V
A
A
nA
m
pF
pF
pF
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
143 -
220 -
74
1.2
-
-
[2]
I
D
is the drain current.
Capacitance values without internal matching.
BLU6H0410L-600P_6H0410LS-600P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 12 July 2013
3 of 15
NXP Semiconductors
BLU6H0410L(S)-600P
Power LDMOS transistor
Table 7.
RF characteristics
Test signal: 2-Tone; T
case
= 25
C unless otherwise specified; in a class-AB NXP production
narrowband test circuit.
Symbol
V
DS
I
Dq
P
L(AV)
G
p
D
IMD3
[1]
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
third-order intermodulation distortion
Conditions
[1]
Min Typ Max Unit
-
-
50
1.3
-
-
-
-
-
28
V
A
W
dB
%
dBc
f
1
= 860 MHz;
f
2
= 860.1 MHz
f
1
= 860 MHz;
f
2
= 860.1 MHz
f
1
= 860 MHz;
f
2
= 860.1 MHz
f
1
= 860 MHz;
f
2
= 860.1 MHz
250 -
20
42
-
21
46
32
I
Dq
for total device.
400
C
oss
(pF)
300
001aam579
200
100
0
0
20
40
V
DS
(V)
60
V
GS
= 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per
section
6.1 Ruggedness in class-AB operation
The
BLU6H0410L-600P
and
BLU6H0410LS-600P
are capable of withstanding a load
mismatch corresponding to VSWR
40 : 1 through all phases under the following
conditions: V
DS
= 50 V; f = 860 MHz at rated power.
BLU6H0410L-600P_6H0410LS-600P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 12 July 2013
4 of 15
NXP Semiconductors
BLU6H0410L(S)-600P
Power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
001aan761
001aan762
24
G
p
(dB)
20
G
p
60
η
D
(%)
40
24
G
p
(dB)
20
G
p
0
IMD3
(dBc)
-20
η
D
IMD3
16
20
16
-40
12
0
100
200
300
0
400
500
P
L(AV)
(W)
12
0
100
200
300
-60
400
500
P
L(AV)
(W)
V
DS
= 50 V; I
Dq
= 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
V
DS
= 50 V; I
Dq
= 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 2.
2-Tone power gain and drain efficiency as
function of load power; typical values
Fig 3.
2-Tone power gain and third order
intermodulation distortion as function of
load power; typical values
7.2 Impedance information
drain 1
gate 1
Z
i
gate 2
drain 2
001aan207
Z
L
Fig 4.
Definition of transistor impedance
Table 8.
Typical push-pull impedance
Simulated Z
i
and Z
L
device impedance; impedance info at V
DS
= 50 V and P
L(M)
= 600 W.
f
MHz
300
325
350
375
BLU6H0410L-600P_6H0410LS-600P
Z
i
0.617
j1.715
0.635
j1.355
0.655
j1.026
0.677
j0.721
All information provided in this document is subject to legal disclaimers.
Z
L
4.989 + j1.365
4.867 + j1.424
4.741 + j1.472
4.614 + j1.511
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 12 July 2013
5 of 15
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