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LS320(TO-92)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size291KB,1 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

LS320(TO-92) Overview

Transistor

LS320(TO-92) Parametric

Parameter NameAttribute value
MakerMicross
package instruction,
Reach Compliance Codecompliant

LS320(TO-92) Preview

LS320
BiFET Amplifier
Linear Systems High Input Impedance BiFET Amplifier
The LS320 is a high input impedance amplifier
produced using a BiFET process and packaged in
TO-92.
The TO-92 package is well suited for cost sensitive
applications and mass production.
(See Packaging Information).
LS320 Features:
High Input Impedance
High Transconductance
FEATURES 
HIGH INPUT IMPEDANCE 
r
Gs
 ≥ = 100GΩ 
HIGH TRANSCONDUCTANCE 
Y
FS
 = 30,000µS 
1
ABSOLUTE MAXIMUM RATINGS 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation @ +125°C 
Maximum Currents 
Drain Current 
Maximum Voltages 
Drain to Source 
Gate to Source 
 
‐65°C to +150°C 
‐55°C to +125°C 
200mW 
2.3mW/°C 
I
D
 = 25mA 
V
DSO
= 20V 
V
GSS 
= 20V 
 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
V
DS
 
Drain to Source Voltage 
‐20 
V
GS
 
Collector to Source Voltage 
‐12 
g
fs
 
Common Source Forward 
30000 
Transconductance 
g
oss
 
Common Source Output Conductance 
‐‐ 
r
Gs
 
Gate to Source Input Resistance 
100 
C
ISS
 
Input Capacitance 
‐‐ 
C
RSS
 
Reverse Transfer Capacitance 
‐‐ 
e
n
 
Noise Voltage 
‐‐ 
TYP. 
‐‐ 
‐10 
‐‐ 
300 
‐‐ 
1.5 
25 
MAX. 
‐‐ 
‐7 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
UNITS 
µS 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The gate to source voltage must never exceed 100V, t < 10ms 
3. Additional screening available 
 
 
 
 
Click To Buy
Functional Schematic
Available Packages:
LS320 in TO-92
LS320 in bare die.
Please contact Micross for full
package and die dimensions
TO-92 (Bottom View)
GΩ 
pA 
pF 
µV 
CONDITIONS 
I
DS 
= 100µA, V
GS
= 0 
I
DS 
= 10mA, V
GS 
= ‐10V
23
 
 
I
DS 
= 10mA, V
GS 
= ‐10V, f =1kHz 
 
V
GS 
= 0 to 20V, T
J
 to 125°C 
I
DS 
= 100µA, V
DS 
= ‐10V 
I
DS 
= 10mA, V
GS 
= ‐10V 
I
DS 
= 10mA, V
DS 
= 10V, BW = 50 to 15 kHz 
 
Micross Components Europe
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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