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OM5262SA

Description
Rectifier Diode, 1 Phase, 2 Element, 12A, 1000V V(RRM), Silicon, TO-254AA,
CategoryDiscrete semiconductor    diode   
File Size21KB,2 Pages
ManufacturerOmnirel Corp.
Download Datasheet Parametric View All

OM5262SA Overview

Rectifier Diode, 1 Phase, 2 Element, 12A, 1000V V(RRM), Silicon, TO-254AA,

OM5262SA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerOmnirel Corp.
Reach Compliance Codeunknown
Other featuresFREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.9 V
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Maximum non-repetitive peak forward current75 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current12 A
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.155 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE

OM5262SA Preview

OM5262SA/RA/DA
HERMETIC JEDEC TO-254AA HIGH EFFICIENCY,
CENTER-TAP HIGH VOLTAGE RECTIFIER
24 Amp, 1000 Volt, 65 ns trr Soft Recovery
FEATURES
Soft Recovery Characteristics
Hermetic Metal Package, JEDEC TO-254AA
Very Low Forward Voltage
Very High Reverse Voltage Capability
Very Low Reverse Recovery Time
Very Low Switching Losses
Isolated Package
Low Thermal Resistance
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This soft recovery rectifier is ideally suited as a free wheeling diode in converters and motor
control circuits, as well as a rectifier in SMPS. The package is designed for those
applications where a small size and a hermetically sealed package is desirable.
Center-Tap configuration.
ABSOLUTE MAXIMUM RATINGS
(Per Diode) T
J
= 25°C
Repetitive Peak Reverse Voltage, V
RRM
...........................................................................................1000V
Non-Repetitive Peak Reverse Voltage, V
RSM
...................................................................................1000V
Repetitive Peak Forward Current, I
FRM
................................................................................................150A
RMS Forward Current, I
(RMS)
..................................................................................................................25A
Average Forward Current, T
C
= 100°C, Duty Cycle = 50%, I
F(AV)
........................................................12A
Surge Non-Repetitive Forward Current, 8.3ms, I
FSM
............................................................................75A
Power Dissipation, T
C
= 100°C, P ........................................................................................................25W
Storage and Junction Range, T
stg
.......................................................................................-55°C to 150°C
Thermal Resistance, Junction-To-Case, R
th(JC)
.............................................................................2.4°C/W
3.2
SCHEMATIC
1
2
COMMON
ANODE
1
1
2
COMMON
CATHODE
3
DOUBLER
PIN CONNECTION
.144 DIA.
.545
.535
.050
.040
3
3
OMXXXXRA
OMXXXXSA
.685
.665
.800
.790
.550
.530
1
2
3
OMXXXXDA
2
Common cathode is standard. Contact the factory for performance
characteristics for common anode and doubler.
Standard Products are supplied with glass feedthroughs.
For ceramic feedthroughs, add the letter “C” to the part number.
Example - OMXXXXCSA.
4 11 R1
Supersedes 2 07 R0
.045
.035
.550
.510
.005
.150 TYP.
.150 TYP.
.260
.249
Z-Tab package also available.
3.2 - 69
OM5262SA/RA/DA
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
I
T
J
= 25°C
T
J
= 100°C
T
J
= 25°C
T
J
= 100°C
R
Test Conditions
V =V
R
RRM
Min.
Typ.
Max.
50
2.5
1.9
1.8
Unit
µA
mA
V
V
F
I = 12A
F
RECOVERY CHARACTERISTICS
Symbol
t
rr
Test Conditions
T = 25°C
J
Min.
Typ.
Max.
155
65
Unit
nS
I
F
= 1A, dI
F
/dt = -15A/µs, V
R
= 30V
I
F
= 0.5A, I
R
= 1A, I
rr
= 0.25A
TURN-OFF SWITCHING CHARACTERISTICS
(Without Series Inductance)
Symbol
t
dI
F
/dt = -50A/µs
IRM
Test Conditions
dI
F
/dt = -100A/µs
dI
F
/dt = -50A/µs
dI
F
/dt = -100A/µs
V
= 200V, I
F
= 12A
J
Min.
Typ.
120
Max.
200
7.8
Unit
nS
A
CC
I
L
P
0.05µH, T = 100°C
See Figure 1
9
RM
TURN-OFF OVERVOLTAGE COEFFICIENT
(With Series Inductance)
Symbol
C=
V
RP
V
CC
T
J
= 100°C
dI
F
/dt = -12A/µs
Test Conditions
V
CC
= 200V, I
F
= I
F(AV)
L
P
12µH, See Figure 2
Min.
Typ.
Max.
4.5
Unit
To evaluate the conduction losses use the following equations:
V
F
= 1.47 + 0.026 I
F
P = 1.47 x I
F(AV)
+ 0.026 I
F
2
(RMS)
I
F
DUT
L
C
V
CC
V
F
I
RM
V
CC
t
IRM
V
RP
dl
F
/dt
L
C
L
P
V
CC
V
F
V
CC
DUT
dl
F
/dt
I
F
Figure 1:
Turn-off switching characteristics
(without series inductance).
Figure 2:
Turn-off switching characteristics
(with series inductance).
TYPICAL REVERSE CURRENT
TYPICAL FORWARD VOLTAGE
I
R
, REVERSE CURRENT (mA)
100
3.2
I
F
, INSTANTANEAOUS
FORWARD CURRENT (AMPS)
10
1.0
0.1
0.01
0.001
70
50
30
T
C
= 100°C
20
10
7.0
5.0
3.0
2.0
T
C
= 100°C
T
C
= 25°C
100
500
1000
T
C
= 25°C
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
.8
1.0
1.2
1.4
1.6
1.8
V
F
, INSTANTANEAOUS VOLTAGE (VOLTS)
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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