BCR400W
Active Bias Controller
Characteristics
Supplies stable bias current even at low battery
voltage and extreme ambient temperature variation
Low voltage drop of 0.7V
3
4
Maximum Ratings
Parameter
Source voltage
Control current
Control voltage
Reverse voltage between all terminals
Total power dissipation,
T
S
= 117 °C
Junction temperature
Storage temperature
Symbol
V
S
I
Contr.
V
Contr.
V
R
P
tot
T
j
T
stg
Value
18
10
16
0.5
330
150
-65 ... 150
mW
°C
Unit
V
mA
V
2
Application notes
Stabilizing bias current of NPN transistors
and FET's from less than 0.2mA up to
more than 200mA
Ideal supplement for Sieget and other transistors
also usable as current source up to 5mA
1
2
EHA07188
1
4
3
VPS05605
Type
BCR400W
Marking
Pin Configuration
W4s
1=GND/E
NPN
2=Contr/B
NPN
3V
S
Package
4=Rext/C
NPN
SOT343
(E
NPN
, B
NPN
, C
NPN
are electrodes of a stabilized NPN transistor)
Thermal Resistance
Junction - soldering point
1)
R
thJS
100
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Aug-07-2001
BCR400W
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
DC Characteristics
Additional current consumption
V
S
= 3 V
Lowest stabilizing current
V
S
= 3 V
I
min
-
0.1
-
mA
I
0
-
20
40
µA
Symbol
min.
Values
typ.
max.
Unit
DC Characteristics with stabilized NPN-Transistors
Lowest sufficient battery voltage
I
B
(NPN) < 0.5mA
Voltage drop
(V
S
-
V
CE
)
I
C
= 25 mA
Change of
I
C
versus
h
FE
h
FE
= 50
Change of
I
C
versus
V
S
V
S
= 3 V
Change of
I
C
versus
T
A
V
drop
I
C
/I
C
I
C
/I
C
I
C
/I
C
-
-
-
-
0.65
0.08
0.15
0.2
-
-
-
-
h
FE
/
V
Smin
-
1.6
-
V
h
FE
V
S
/V
S
2
Aug-07-2001
%/K
BCR400W
Collector current
I
C
=
f
(h
FE
)
I
C
and
h
FE
refer to stabilized NPN Transistor
Parameter
R
ext.
( )
10
3
mA
Collector Current
I
C
=
f
(V
S
)
of stabilized NPN Transistor
Parameter
R
ext.
( )
10
3
mA
10
2
5.9
10
2
I
C
I
C
10
1
67
10
1
10
0
760
10
0
4.3k
10
-1
0
50
100
150
200
250
-
350
10
-1
0
2
h
FE
Voltage drop
V
drop
=
f
(I
C
)
Collector current
I
C
=
f
(R
ext.
)
of stabilized NPN Transistor
10
3
mA
V
2
1.7
1.6
10
2
V
drop
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-2
10
10
-1
I
C
10
1
10
0
10
0
10
1
10
2
mA
10
3
10
-1 0
10
10
1
I
C
3
2.1
5.9
12.4
67
760
4
6
8
V
11
V
S
10
2
10
3
Ohm
10
4
R
ext.
Aug-07-2001
BCR400W
Collector current
T
A
=
f
(I
C
)
of stabilized NPN Transistor
Parameter:
R
ext.
( )
10
mA
2.2
3
Control current
I
=
f
(R
ext.
)
in current source application
10
1
10
2
I
C
26
10
1
65
I
Contr.
10
0
10
-1 -1
10
10
0
10
-1
-40 -20
0
20
Control current
I
=
f
(T
A
)
in current source application
1.5
mA
1.2
I
Contr.
1
0.9
0.8
0.7
0.6
I
Contr.
1.1
0.5
0.4
0.3
0.2
0.1
0
-20
0
20
40
60
80
°C
6
mA
290
760
4.3k
40
60
80 100 120
°C
160
10
0
10
1
10
2
KOhm
3
10
T
A
R
ext.
Control current
I
=
f
(V
S
)
in current source application
2.2
mA
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
110
0
0
2
4
6
8
V
11
T
A
V
S
4
Aug-07-2001
BCR400W
Total power dissipation
P
tot
=
f
(T
S
)
400
mW
300
Note that up to
T
S=115°C
it is not possible to exceed
P
tot
respecting the maximum
ratings of
V
S and
I
Contr.
The collector or drain
current (respectively) of
the stabilized RF transistor
does not affect BCR 400
directly, as it provides just the
base current.
P
tot
250
200
150
100
50
0
0
20
40
60
80
100
120
°C
150
T
S
Typical application for GaAs FET
with active bias controller
RF IN
RF OUT
100 pF
100 kΩ
BCR 400
1
4
R
ext
3
2
100 k
Ω
-
V
G
1 nF
+
V
S
5
EHA07190
Aug-07-2001
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