SURGE SUPPRESSOR DIODE
DAM3B
FEATURES
•
High transient reverse power capability
suitable for protecting automobile electronic
components etc.
•
Diffused-junction. Resin encapsulated.
OUTLINE DRAWING
φ
3.6
(0.14)
Unit in mm(inch)
φ
0.8
(0.03)
58MIN. (2.28)
6
(0.24)
27CA
Weight: 0.50 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Non-Repetitive Peak Reverse One-
Cycle Dissipation
Operating Junction Temperature
Storage Temperature
DC Reverse Voltage
Symbols
P
RSM
T
j
T
stg
V
DC
Units
W
°C
°C
V
Ratings
1800(Rectangular pulse t=0.1ms T
j
=25°C start)
-40 ~ +150
-40 ~ +150
Refer to characteristics column
CHARACTERISTICS(T
L
=25°C)
Type
DC
Reverse
Voltage
V
DC
(V)
7
8
9
10
11
12
13
14
16
18
20
22
24
26
28
31
34
37
Characteristics
Zener Voltage Vz (V)
Maximum
Test Current
Dynamic
Iz
Minimum
Maximum Impedance
(mA)
Zz (ohm)
9.4
10.4
11.4
12.4
13.5
15.3
16.8
18.8
20.8
22.7
25.1
28.0
31.0
33.4
36.1
39.8
43.3
46.9
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.6
41.9
46.2
50.7
55.1
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
30
30
30
75
75
75
75
75
75
45
45
45
30
30
30
30
30
30
20
20
20
Maximum
Reverse
Current
I
RRM
(µA)
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
DAM3B10
DAM3B11
DAM3B12
DAM3B13
DAM3B15
DAM3B16
DAM3B18
DAM3B20
DAM3B22
DAM3B24
DAM3B27
DAM3B30
DAM3B33
DAM3B36
DAM3B39
DAM3B43
DAM3B47
DAM3B51
Type mark (Red)
26MIN.
(1.02)
Cathode band (Red)
Direction of polarity
26MIN.
(1.02)
V
R
(V)
7
8
9
10
11
12
13
14
16
18
20
22
24
26
28
31
34
37
PDE-DAM3B-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse
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