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CBD20100VCT_T0_10001

Description
CBD20100VCT
CategoryDiscrete semiconductor    diode   
File Size90KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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CBD20100VCT_T0_10001 Overview

CBD20100VCT

CBD20100VCT_T0_10001 Parametric

Parameter NameAttribute value
MakerPANJIT
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.74 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage100 V
Maximum reverse current80 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

CBD20100VCT_T0_10001 Preview

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CBD20100VCT
LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• Lead free in comply with EU RoHS 2002/95/EC directives
100 Volts
CURRENT
20 Amperes
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight : 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified current
Peak forward surge current : 8.3ms single half
sine-wave superimposed on rated load
Typical thermal resistance
Operating junction temperature range
Storage temperature range
per device
per diode
per diode
( No te 1 )
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
R
ΘJC
T
J
T
STG
VALUE
100
71
100
20
10
200
2.5
-55 to + 150
-55 to + 150
O
UNIT
V
V
V
A
A
C /W
o
C
C
o
Note : 1. Mounted on infinite heatsink.
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=3A
I
F
=5A
I
F
=10A
I
F
=3A
I
F
=5A
I
F
=10A
V
R
=80V
Reverse current per diode
I
R
V
R
=100V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
MIN.
100
-
-
-
-
-
-
-
-
-
TYP.
-
0.5
0.56
0.69
0.42
0.49
0.59
10
-
20
MAX.
-
-
-
0.74
-
-
-
-
80
-
UNIT
V
V
Instantaneous forward voltage per
diode
V
F
T
J
=125
o
C
V
μA
μA
mA
December 14,2012-REV.00
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