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KSP92J05Z

Description
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size68KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSP92J05Z Overview

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

KSP92J05Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz

KSP92J05Z Preview

KSP92/93
HIGH VOLTAGE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
: KSP92
: KSP93
Collector-Emitter Voltage : KSP92
: KSP93
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
A
=25°C)
Derate above 25°C
Collector Dissipation (T
A
=25°C)
Derate above 25°C
Junction Temperature
Storage Temperature
Collector-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
T
J
T
STG
Rating
-300
-200
-300
-200
-5
-500
625
5
1.5
12
150
-55 ~ 150
Unit
V
V
V
V
V
mA
mW
mW/°C
W
mW/°C
°C
°C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
: KSP92
: KSP93
*Collector-Emitter Breakdown Voltage
: KSP92
: KSP93
Emitter-Base Breakdown Voltage
Collector Cur-off Current
: KSP92
: KSP93
Emitter Cut-off Current
*DC Current Gain
Symbol
BV
CBO
Test Conditions
I
C
= -100µA, I
E
=0
-300
-200
BV
CEO
I
C
= -1mA, I
B
=0
-300
-200
-5
-0.25
-0.25
-0.10
25
40
25
-0.50
-0.90
50
V
V
MHz
V
V
V
µA
µA
µA
V
V
Min
Max
Unit
BV
EBO
I
CBO
I
E
= -100µA, I
C
=0
V
CB
= -200V, I
E
=0
V
CB
= -160V, I
E
=0
V
EB
= -3V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
I
C
= -20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
V
CE
= -20V, I
C
= -10mA
I
EBO
h
FE
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
: KSP92
: KSP93
* Pulse Test: PW≤300µs, Duty Cycle≤2%
V
CE
(sat)
V
BE
(on)
f
T
C
CB
V
CB
= -20V, I
E
=0
f=1MHz
6
8
pF
pF
Rev. B
©
1999 Fairchild Semiconductor Corporation
KSP92/93
PNP EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E
2
CMOS
TM
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
HiSeC™
DISCLAIMER
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

KSP92J05Z Related Products

KSP92J05Z KSP92J18Z KSP93J05Z KSP93J18Z
Description Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
Maker Fairchild Fairchild Fairchild Fairchild
Parts packaging code TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 300 V 300 V 200 V 200 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 25 25 25
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz 50 MHz
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