MBM29LV160TE-70TN datasheet, PDF

Datasheet> All Categories > storage> storage> MBM29LV160TE-70TN

MBM29LV160TE-70TN: DescriptionFlash, 1MX16, 70ns, PDSO48, PLASTIC, TSOP1-48; Categorystorage storage; File Size477KB，64 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/

Download Datasheet Parametric View All

MBM29LV160TE-70TN Overview

Flash, 1MX16, 70ns, PDSO48, PLASTIC, TSOP1-48

MBM29LV160TE-70TN Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SPANSION
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP48,.8,20
Contacts	48
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	70 ns
Spare memory width	8
startup block	TOP
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G48
JESD-609 code	e0
length	18.4 mm
memory density	16777216 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	1,2,1,31
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	3/3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.1 mm
Department size	16K,8K,32K,64K
Maximum standby current	0.000005 A
Maximum slew rate	0.035 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
switch bit	YES
type	NOR TYPE
width	12 mm

Preview

Download Datasheet

View All

MBM29LV160TE/BE

70/90

Data Sheet

(Retired Product)

MBM29LV160TE/BE

70/90

Cover Sheet

This product has been retired and is not recommended for new designs. Availability of this document is retained for reference

and historical purposes only.

Continuity of Specifications

There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

made are the result of normal data sheet improvement and are noted in the document revision summary.

For More Information

Please contact your local sales office for additional information about Spansion memory solutions.

Publication Number

MBM29LV160TE/BE

Revision

DS05-20883-7E

Issue Date

July 31, 2007

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20883-7E

FLASH MEMORY

CMOS

16M (2M

8/1M

16) BIT

MBM29LV160TE/BE

70/90

■

GENERAL DESCRIPTION

The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA

packages. The device is designed to be programmed in-system with the standard system 3.0 V V

supply.

12.0 V V

and 5.0 V V

are not required for write or erase operations. The device can also be reprogrammed

in standard EPROM programmers.

The standard MBM29LV160TE/BE offers access times of 70 ns and 90 ns allowing operation of high-speed

microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write

enable (WE), and output enable (OE) controls.

The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E

PROMs. Commands are

written to the command register using standard microprocessor write timings. Register contents serve as input

to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the device is similar

to reading from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the

Embedded Program

Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the device automatically times the erase pulse widths and

verifies proper cell margins.

(Continued)

■

PRODUCT LINE UP

Part No.

Power Supply Voltage V

(V)

Max Address Access Time (ns)

Max CE Access Time (ns)

Max OE Access Time (ns)

MBM29LV160TE/160BE

= 3.0 V

+0.6 V

–0.3 V

Retired Product DS05-20883-7E_July 31, 2007

MBM29LV160TE

70/90

/MBM29LV160BE

70/90

(Continued)

Any individual sector is typically erased and verified in 1.0 second (if already preprogrammed).

The device also features sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory.

The device features single 3.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

by the Toggle Bit feature on DQ

, or the RY/BY output pin. Once the end of a program or erase cycle has been

completed, the device internally resets to the read mode.

The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Em-

bedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then

reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset

occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically

reset to the read mode and will have erroneous data stored in the address locations being programmed or

erased. These locations need re-writing after the Reset. Resetting the device enables the system’s micropro-

cessor to read the boot-up firmware from the Flash memory.

Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest

levels of quality, reliability, and cost effectiveness. The MBM29LV160TE/BE memory electrically erases all bits

within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word

at a time using the EPROM programming mechanism of hot electron injection.

Embedded Erase

and Embedded Program

are trademarks of Advanced Micro Devices, Inc.

■

PACKAGES

48-pin plastic TSOP (1)

Marking Side

48-pin plastic TSOP (1)

Marking Side

(FPT-48P-M19)

(FPT-48P-M20)

48-pin plastic CSOP

48-ball plastic FBGA

(LCC-48P-M03)

(BGA-48P-M11)

Retired Product DS05-20883-7E_July 31, 2007

Recommended Resources

A starting circuit that reduces the voltage of the synchronous motor resistance and adds excitation according to the change of the stator current.

Power-on delay output low level circuit

Autotransformer step-down starting control circuit using redundant contacts of time relay

ML2258 internal circuit block diagram

Rain sound generator circuit

Circuit with arbitrarily set backup power supply voltage

[National Technology N32G457 Review] Comparison of two N32G457 development tools and lighting programs: MDK, IAR and RT-Thread are tools that can be used to develop the N32G457 development board. The following only uses MDK and RT-Thread as examples to compare the program changes for lighting up the onb...; jinglixixi Domestic Chip Exchange

I actually saw a technical exchange post from my alma mater here: I actually saw a technical exchange post from my alma mater here, and my eyes were filled with tears!...; minranyuxin MCU

【Distributed temperature and humidity acquisition system】+temperature and humidity acquisition module: [i=s]This post was last edited by lansebuluo on 2022-9-22 09:12[/i]After a period of getting familiar with the W800 chip configuration and demo code, I finally completed the programming and debugging ...; lansebuluo DigiKey Technology Zone

Seeking the truth: Does an engineer’s electrocardiogram look like this?: :lol...; yaoniming3k Talking

[Help] I changed the chip, but it still won't burn, what's the problem? Urgent!!!: I made a circuit board with f123, using chips from 2 years ago, and successfully burned and debugged. I accidentally burned the chip, and replaced it with a new one (just bought), and then it prompted...; zhangyunyun Microcontroller MCU

TMS570LS04x LED routine: TMS570LS04x LED routine...; Sur Microcontroller MCU

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components