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S52K12A

Description
Silicon Controlled Rectifier, 2510A I(T)RMS, 1600000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size79KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

S52K12A Overview

Silicon Controlled Rectifier, 2510A I(T)RMS, 1600000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element

S52K12A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionDISK BUTTON, O-CEDB-N2
Reach Compliance Codeunknown
Nominal circuit commutation break time130 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current500 mA
JESD-30 codeO-CEDB-N2
Maximum leakage current100 mA
Humidity sensitivity level1
On-state non-repetitive peak current38000 A
Number of components1
Number of terminals2
Maximum on-state current1600000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum rms on-state current2510 A
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
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