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BCX70KLT3

Description
Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size249KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BCX70KLT3 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

BCX70KLT3 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-based maximum capacity4.5 pF
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment0.225 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
Maximum off time (toff)800 ns
Maximum opening time (tons)150 ns
VCEsat-Max0.55 V

BCX70KLT3 Related Products

BCX70KLT3 BCX70JLT3 BCX70GLT3
Description Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB 200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-based maximum capacity 4.5 pF 4.5 pF 4.5 pF
Collector-emitter maximum voltage 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 90 60
JEDEC-95 code TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Maximum power consumption environment 0.225 W 0.225 W 0.225 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz
Maximum off time (toff) 800 ns 800 ns 800 ns
Maximum opening time (tons) 150 ns 150 ns 150 ns
VCEsat-Max 0.55 V 0.55 V 0.55 V
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