BU706 datasheet, PDF - EEWORLD Datasheet

BU706: Description5A, 700V, NPN, Si, POWER TRANSISTOR, TO-218; CategoryDiscrete semiconductor The transistor; File Size74KB，2 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BU706 Overview

5A, 700V, NPN, Si, POWER TRANSISTOR, TO-218

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Reach Compliance Code	not_compliant
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	700 V
Configuration	SINGLE
Minimum DC current gain (hFE)	6
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	100 W
Maximum power dissipation(Abs)	100 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	5 V

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