CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
2.
θ
JC
, “case temperature” location is at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows:
T
A
= -40°C to +85°C; V
IN
= (V
O
+0.5V) to 6.5V with a minimum V
IN
of 2.3V; C
IN
= 1µF; C
O
= 1µF;
C
BYP
= 0.01µF; C
POR
= 0.01µF
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
PARAMETER
DC CHARACTERISTICS
Supply Voltage
Ground Current
V
IN
Quiescent condition: I
O1
= 0µA; I
O2
= 0µA
I
DD1
I
DD2
One LDO active
Both LDO active
@25°C
2.3
6.5
V
25
45
0.1
1.9
1.6
2.1
1.8
40
60
1.0
2.3
2.0
+1.8
µA
µA
µA
V
V
%
%/V
%
%
mA
mA
Shutdown Current
UVLO Threshold
I
DDS
V
UV+
V
UV-
Regulation Voltage Accuracy
Line Regulation
Load Regulation
Variation from nominal voltage output, V
IN
= V
O
+0.5 to 5.5V,
T
J
= -40°C to 125°C
V
IN
= (V
OUT
+ 1.0V relative to highest output voltage) to 5.5V
I
OUT
= 100µA to 150mA (VO1 and VO2)
I
OUT
= 100µA to 300mA (VO2)
-1.8
-0.2
0
0.1
0.2
0.7
1.0
Maximum Output Current
I
MAX
VO1: Continuous
VO2: Continuous
150
300
350
475
125
300
250
200
145
110
600
200
500
400
325
Internal Current Limit
Dropout Voltage (Note 4)
I
LIM
V
DO1
V
DO2
V
DO3
V
DO4
I
O
= 150mA; V
O
>
2.1V (VO1)
I
O
= 300mA; V
O
< 2.5V (VO2)
I
O
= 300mA; 2.5V
≤
V
O
≤
2.8V (VO2)
I
O
= 300mA; V
O
> 2.8V (VO2)
mA
mV
mV
mV
mV
°C
°C
Thermal Shutdown Temperature
T
SD+
T
SD-
AC CHARACTERISTICS
Ripple Rejection
I
O
= 10mA, V
IN
= 2.8V(min), V
O
= 1.8V, C
BYP
= 0.1µF
@ 1kHz
@ 10kHz
@ 100kHz
Output Noise Voltage
I
O
= 100µA, V
O
= 1.5V, T
A
= 25°C, C
BYP
= 0.1µF
BW = 10Hz to 100kHz (Note 3)
70
55
40
30
dB
dB
dB
µVrms
3
FN9220.1
December 21, 2005
ISL9012
Electrical Specifications
Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows:
T
A
= -40°C to +85°C; V
IN
= (V
O
+0.5V) to 6.5V with a minimum V
IN
of 2.3V; C
IN
= 1µF; C
O
= 1µF;
C
BYP
= 0.01µF; C
POR
= 0.01µF
(Continued)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
PARAMETER
DEVICE START-UP CHARACTERISTICS
Device Enable TIme
LDO Soft-start Ramp Rate
EN1, EN2 PIN CHARACTERISTICS
Input Low Voltage
Input High Voltage
Input Leakage Current
Pin Capacitance
POR PIN CHARACTERISTICS
POR Thresholds
V
POR+
V
POR-
POR Delay
T
PLH
T
PHL
POR Pin Output Low Voltage
POR Pin Internal Pull-up
Resistance
NOTES:
3. Guaranteed by design and characterization.
4. VOx = 0.98 * VOx(NOM); Valid for VOx greater than 1.85V.
V
OL
R
POR
@I
OL
= 1.0mA
78
100
CPOR = 0.01µF
As a percentage of nominal output voltage
91
87
100
94
90
200
25
0.2
130
97
93
300
%
%
ms
µs
V
kΩ
V
IL
V
IH
I
IL
, I
IH
C
PIN
Informative
5
-0.3
1.4
0.5
V
IN
+0.3
0.1
V
V
µA
pF
T
EN
T
SSR
Time from assertion of the ENx pin to when the output voltage
reaches 95% of the VO(nom)
Slope of linear portion of LDO output voltage ramp during start-
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