SMD Type
PNP Transistors
2SB709A-HF
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
●
Complimentary to 2SD601A-HF
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
1.3
-0.1
●
For general amplification
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
■
Features
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-45
-45
-7
-100
200
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-Emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -2 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -40 V , I
E
=0
V
CE
= -20 V , I
B
=0
V
EB
= -6V , I
C
=0
I
C
=-100 mA, I
B
=-10mA
I
C
=-100 mA, I
B
=-10mA
V
CE
= -10V, I
C
= -2mA
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -10V, I
C
= -1mA,f=200MHz
60
160
Min
-45
-45
-7
-0.1
-100
-0.1
-0.5
-1.2
460
2.7
pF
MHz
V
uA
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SB709A-Q-HF 2SB709A- R-HF 2SB709A-S-HF
160-260
BQ1
F
210-340
BR1
F
290-460
BS1
F
www.kexin.com.cn
1
SMD Type
PNP Transistors
2SB709A-HF
■
Typical Characterisitics
-8
-7
Transistors
Static Characteristic
-3.0uA
-2.7uA
-2.4uA
COMMON
EMITTER
T
a
=25
℃
600
h
FE
—— I
C
V
CE
= -10V
(mA)
500
-6
-5
-4
-3
-2
-1
-0
h
FE
DC CURRENT GAIN
400
I
C
COLLECTOR CURRENT
-21uA
-18uA
-15uA
-12uA
-9uA
-6uA
I
B
=-3uA
-0
-5
-10
-15
T
a
=100 C
o
300
200
T
a
=25 C
o
100
0
-0.1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
-1
-10
I
C
(mA)
-100
-200
V
CEsat
——
β=10
I
C
100
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
-150
-100
CAPACITANCE
C
(pF)
T
a
=25 C
o
T
a
=100
℃
10
C
ib
-50
T
a
=25
℃
-0
C
ob
β=10
-1
-10
-100
1
-0.1
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
-1
V
(V)
-10
-20
250
f
T
——
I
C
T
a
=25 C
o
250
P
c
——
T
a
200
COLLECTOR POWER DISSIPATION
P
c
(mW)
V
CE
=-10V
(MHz)
200
TRANSITION FREQUENCY
f
T
150
150
100
100
50
50
0
-1
-10
-100
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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