SMD Type
PNP Transistors
2SB815-HF
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
■
Features
+0.1
2.4
-0.1
●
Complimentary to 2SD1048-HF
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
1.3
-0.1
●
Large current capacity (IC=0.7A) and low-saturation voltage.
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
-20
-15
-5
-700
-1.5
200
125
-55 to 125
mA
A
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= - 15V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-5 mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, I
B
=-10mA
V
CE
= -2V, I
C
= -50mA
V
CE
= -2V, I
C
= -500mA
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -10V, I
C
= -50mA
200
80
13
250
pF
MHz
-15
-60
Min
-20
-15
-5
-0.1
-0.1
-35
-120
-1.2
600
uA
mV
V
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
2SB815-B6-HF
200-400
B6
F
2SB815-B7-HF
300-600
B7
F
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1
SMD Type
PNP Transistors
2SB815-HF
■
Typical Characterisitics
IC -- VCE
--800
--700
10000
Transistors
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
1000
5
3
2
100
5
3
2
10
IC / IB=10
Collector Current, IC -- mA
A
--600
--500
--400
--300
--200
--100
0
--5
0m
0
--3
mA
mA
--10
--6mA
--2mA
--1mA
IB=0
0
--0.1
--0.2
--0.3
--0.4
--0.5
Collector-to-Emitter Voltage, VCE -- V
100
5
1.0
(For PNP, minus sign is omitted.)
2
3
5
IB -- VBE
Collector Current, IC -- mA
10
2
3
5
100
2
3
5
1000
(For PNP, minus sign is omitted.)
VCE=5V
1000
7
f T -- IC
VCE=10V
Gain-Bandwidth Product, f T -- MHz
5
3
2
100
7
5
3
2
10
1.0
80
Base Current, IB --
∝A
60
40
20
0
(For PNP, minus sign is omitted.)
2
3
5
7
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1000
7
5
hFE -- IC
Collector Current, IC -- mA
10
2
3
5
7
100
VCE=2V
Output Capacitance, Cob -- pF
5
3
2
Cob -- VCB
f=1MHz
DC Current Gain, hFE
3
2
100
7
5
3
2
10
1.0
10
7
5
3
2
(For PNP, minus sign is omitted.)
2 3
5
Collector Current, IC -- mA
10
2 3
5
100
2 3
5
1000
2 3
5
1.0
(For PNP, minus sign is omitted.)
5
7
1.0
2
3
5
7
Collector-to-Base Voltage, VCB -- V
10
2
3
5
2
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SMD Type
PNP Transistors
2SB815-HF
■
Typical Characterisitics
300
Transistors
PC -- Ta
Collector Dissipation, PC -- mW
250
200
150
100
50
0
0
20
Ambient Temperature, Ta --
。
C
40
60
80
100
120
140
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3
Embedded System
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