SMD Type
PNP Transistors
2SB967
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
■
Features
●
Large collector current Ic
●
Low collector to emitter saturation voltage V
CE(sat).
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
+0.1
2.30
-0.1
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
2.3
+0.15
4 .60
-0.15
+
0.60
- 0.1
0.1
1 Base
2 Collector
3 Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
-27
-18
-7
-5
-8
20
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -20V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-3 A, I
B
=-100mA
I
C
=-3 A, I
B
=-100mA
V
CE
= -2V, I
C
= -2 A
V
CB
= –20V, I
E
= 0, f = 1MHz
V
CE
= -6V, I
E
= 50mA,f=200MHz
120
90
Min
-27
-18
-7
-0.1
-1
-1
-1.2
625
85
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
2SB967-P
90-135
2SB967-Q
125-205
2SB967-R
180-625
3
.8
0
www.kexin.com.cn
1
SMD Type
PNP Transistors
2SB967
■
Typical Characterisitics
P
C
— Ta
32
–6
T
C
=Ta
28
–5
I
B
=–40mA –35mA
Transistors
I
C
— V
CE
T
C
=25˚C
–30mA
–25mA
–4
–20mA
–15mA
–10mA
–2
–5mA
–1
–1mA
–12
I
C
— V
BE
V
CE
=–2V
Collector power dissipation P
C
(W)
–10
Collector current I
C
(A)
24
20
16
12
8
4
0
Collector current I
C
(A)
–8
T
C
=100˚C
25˚C
–25˚C
–3
–6
–4
–2
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
0
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature Ta (
˚C
)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
I
C
/I
B
=30
100000
h
FE
— I
C
V
CE
=–2V
240
f
T
— I
E
V
CB
=–6V
f=200MHz
T
C
=25˚C
Forward current transfer ratio h
FE
10000
Transition frequency f
T
(MHz)
–10
30000
200
3000
1000
300
100
30
10
– 0.01 – 0.03 – 0.1 – 0.3
–25˚C
T
C
=100˚C
25˚C
160
120
– 0.3
– 0.1
– 0.03
T
C
=100˚C
–25˚C
25˚C
–1
–3
–10
80
40
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
0
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
200
Collector output capacitance C
ob
(pF)
160
I
E
=0
f=1MHz
T
C
=25˚C
120
80
40
0
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
2
www.kexin.com.cn
京公网安备 11010802033920号
EEWORLD
