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NB10HSA08_15

Description
Schottky Barrier Diode
File Size564KB,2 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet View All

NB10HSA08_15 Overview

Schottky Barrier Diode

10A Avg. 80Volts
NB10HSA08
構造:ショットキーバリアダイオード(SBD)
Construction : Schottky Barrier Diode
Schottky Barrier Diode
DSE-13051(1/2)
外½寸法図
Package : NB
OUTLINE DRAWING
Dimension : mm
用途:高周波整流用
Application : High-Frequency Rectification
特長
小型 SMD
½熱抵抗
高電流
Tj=150℃
Feature
Small SMD
Lower Thermal-Resistance
High Current Capability
Tj=150℃
Weight
: 0.06g(typ.)
Flammability : Epoxy Resin=UL94V-0 Recognized
■ 絶対最大定格(表示無き場合
項目
Item
くり返しピーク逆電圧
Repetitive Peak Reverse Voltage
平均整流電流
Average Rectified Output Current
実効順電流
RMS Forward Current
サージ順電流
Surge Forward Current
動½接合温度範囲
Operation Junction Temperature Range
保存温度範囲
Storage Temperature Range
Ta=25℃)
Absolute Maximum Ratings (Ta = 25
o
C unless otherwise stated)
記号
Symbol
条件
Conditions
定格値
Rating
単½
Units
V
RRM
50Hz 正弦全波通電
抵抗負荷 *1
50H Full Sine Wave,
Resistive Load
Tl=91℃,V
RM
=40V
(Tl:Lead Temperature)
Ta=29℃ *2
V
RM
=40V
50Hz 正弦全波 1 サイクル 非繰り返し
50Hz Full Sine Wave,1 cycle,Non-repetitive
80
10
V
I
O
A
3.0
11.1
120
-40½+150
-40½+150
A
A
I
F(RMS)
I
FSM
T
jw
T
stg
■電気的・熱的特性
Electrical / Thermal Characteristics
項目
Item
ピーク逆電流
Peak Reverse Current
ピーク順電圧
Peak Forward Voltage
接合容量
Junction Capacitance
熱抵抗
Thermal Resistance
記号
Symbol
条件
Conditions
最小値
min.
Per diode
代表値
typ.
最大値
max.
単½
Units
I
RM
V
FM
Cj
Rth(j-l)
Rth(j-a)
V
RM
=V
RRM
,T
j
=25℃,
-
-
-
-
135
100
0.7
-
7
60
µA
V
pF
℃/W
℃/W
I
FM
=5.0A,T
j
=25℃,
Per diode
f=100kHz,V
R
=10V,
Per diode
接合部・リード間
Junction to Lead
-
-
-
*2(½゙ラ½ポ基板実装)
-
Junction to Ambient
*1 : ½½½ド½モン動½による/Common
Cathode Operation
*2 : プリント基板実装 /Glass-Epoxy
Substrate Mounted (Soldering Land=2.0*1.5mm,2.0*3.5mm,Both Sides)
接合部・周囲間
本資料の記載内容は½品改良などのため予告なく変更することがあります
The content specified herein is subject to change without notice.
Date of issue:2013.9.25
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