BFX88 datasheet, PDF - EEWORLD Datasheet

BFX88: DescriptionTRANSISTOR,BJT,PNP,40V V(BR)CEO,600MA I(C),TO-39; CategoryDiscrete semiconductor The transistor; File Size35KB，1 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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BFX88 Overview

TRANSISTOR,BJT,PNP,40V V(BR)CEO,600MA I(C),TO-39

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
Reach Compliance Code	compliant
Maximum collector current (IC)	0.6 A
Configuration	Single
Minimum DC current gain (hFE)	40
JESD-609 code	e0
Maximum operating temperature	175 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.6 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	100 MHz

	BFX88	BFX87	BFY56	BFX86	BFY51	BFX85
Description	TRANSISTOR,BJT,PNP,40V V(BR)CEO,600MA I(C),TO-39	TRANSISTOR,BJT,PNP,50V V(BR)CEO,600MA I(C),TO-39	TRANSISTOR,BJT,NPN,45V V(BR)CEO,1A I(C),TO-39	TRANSISTOR,BJT,NPN,35V V(BR)CEO,1A I(C),TO-39	TRANSISTOR,BJT,NPN,30V V(BR)CEO,1A I(C),TO-205AD	TRANSISTOR,BJT,NPN,60V V(BR)CEO,1A I(C),TO-39
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	compliant	compliant	compliant	compliant	compli	compli
Maximum collector current (IC)	0.6 A	0.6 A	1 A	1 A	1 A	1 A
Configuration	Single	Single	Single	Single	Single	Single
Minimum DC current gain (hFE)	40	40	30	70	40	70
JESD-609 code	e0	e0	e0	e0	e0	e0
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Polarity/channel type	PNP	PNP	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.6 W	0.6 W	0.8 W	0.8 W	0.8 W	0.8 W
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	100 MHz	100 MHz	40 MHz	50 MHz	50 MHz	50 MHz
Maker	National Semiconductor（TI ）	-	-	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）

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