BAS116T, BAW156T,
BAV170T, BAV199T
SURFACE MOUNT LOW LEAKAGE DIODE
Features
NEW PRODUCT
·
·
Ultra-Small Surface Mount Package
Very Low Leakage Current
UNDER DEVELOPMENT
TOP VIEW
SOT-523
Dim
A
B
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
Mechanical Data
·
·
·
·
·
·
Case: SOT-523, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: See Diagram
Weight: 0.002 grams (approx.)
Ordering Information, see Sheet 2
G
H
K
A
B
C
C
D
G
H
J
K
N
M
L
M
N
J
D
L
All Dimensions in mm
BAS116T Marking: 50
BAW156T Marking: 53
BAV170T Marking: 51
BAV199T Marking: 52
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Single Diode
Double Diode
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FRM
I
FSM
P
d
R
qJA
T
j
, T
STG
Value
85
60
215
125
500
4.0
1.0
0.5
150
833
-65 to +150
Unit
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 1)
Leakage Current (Note 1)
Junction Capacitance
Reverse Recovery Time
Notes:
Symbol
V
(BR)R
V
FM
I
RM
C
j
t
rr
Min
85
¾
¾
¾
¾
Typ
¾
¾
¾
2
¾
Max
¾
0.90
1.0
1.1
1.25
5.0
80
¾
3.0
Unit
V
V
nA
nA
pF
ms
Test Condition
I
R
= 100mA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
j
= 150°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
1. Device mounted on FR-4 PC board with recommended pad layout, minimum.
2. Short duration pulse test to minimize self-heating effect.
DS30258 Rev. A-1
1 of 2
BAS116T, BAW156T, BAV170T, BAV199T
200
150
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
250
1000
P
D
, POWER DISSIPATION (mW)
NEW PRODUCT
100
10
100
50
1.0
0.1
0
0
25
50
75
100
125
150
0.01
0
1
2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
10
V
R
= 75V
I
R
, REVERSE CURRENT (nA)
1
0.1
0
50
100
150
200
T
A
, AMBIENT TEMPERATURE (
°C
)
Fig. 3 Typical Reverse Characteristics
UNDER DEVELOPMENT
Ordering Information
(Note 3)
Device
BAS116T-7
BAW156T-7
BAV170T-7
BAV119T-7
Notes:
Packaging
SOT-523
SOT-523
SOT-523
SOT-523
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30258 Rev. A-1
2 of 2
BAS116T, BAW156T, BAV170T, BAV199T
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