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2N5613

Description
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size230KB,2 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
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2N5613 Overview

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,

2N5613 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
VCEsat-Max1.5 V
Base Number Matches1
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