R1112N SERIES
LOW NOISE 150mA LDO REGULATOR
NO.EA-059-130409
OUTLINE
The R1112N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low
supply current, low ON-resistance, and high Ripple Rejection. Each of these voltage regulator ICs consists of a
voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit.
These ICs perform with low dropout voltage and a chip enable function. The line transient response and load
transient response of the R1112N Series are excellent, thus these ICs are very suitable for the power supply for
hand-held communication equipment.
The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5
(Mini-mold) package, high density mounting of the ICs on boards is possible.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Supply Current ................................................................ Typ. 100μA
Standby Current ............................................................ Typ. 0.1μA
Dropout Voltage .............................................................. Typ. 0.19V (I
OUT
=100mA
3.0V Output type)
Ripple Rejection.............................................................. Typ. 80dB(f=1kHz)
Temperature-Drift Coefficient of Output Voltage ............. Typ.
±100ppm/°C
Line Regulation ............................................................... Typ. 0.05%/V
Output Voltage Accuracy.................................................
±2.0%
Excellent Dynamic Response
Package ........................................................................ SOT-23-5(Mini-mold)
Output Voltage ................................................................ 1.5V to 5.0V (0.1V steps)
(
For other voltages, please refer to MARK INFORMATIONS.)
Built-in chip enable circuit ( 2 types; A: active “Low”, B: active “High”)
Pin-out............................................................................. Similar to the LP2980/LP2985
Built-in fold-back protection circuit .................................. Typ.30mA (Current at short mode)
Ceramic capacitors recommended to be used with this IC
APPLICATIONS
•
Power source for cellular phones such as GSM, CDMA and various kinds of PCSs.
•
Power source for electrical appliances such as cameras, VCRs and camcorders.
•
Power source for battery-powered equipment.
i
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i
m
d
e
t
o
r
P
u
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t
c
1
R1112N
PIN CONFIGURATION
SOT-23-5
5
4
(mark side)
1
2
3
PIN DESCRIPTION
Pin No
1
2
3
4
5
Symbol
V
DD
GND
CE
or CE
NC
Pin Description
Input Pin
Ground Pin
Chip Enable Pin
No Connection
Output pin
V
OUT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
IN
V
CE
V
OUT
I
OUT
P
D
Input Voltage
T
opt
T
stg
∗)
For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
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L
i
m
Input Voltage(
CE
or CE Pin)
Output Voltage
Output Current
Power Dissipation
d
e
t
Item
o
r
P
u
d
Rating
7.0
-0.3 to V
IN
+0.3
-0.3 to V
IN
+0.3
200
250
-40 to 85
-55 to 125
t
c
Unit
V
V
V
mA
mW
°C
°C
Operating Temperature Range
Storage Temperature Range
3
R1112N
ELECTRICAL CHARACTERISTICS
•
R1112Nxx1A
Symbol
V
OUT
I
OUT
ΔV
OUT
/ΔI
OUT
V
DIF
I
SS
Istandby
ΔV
OUT
/ΔV
IN
RR
V
IN
ΔV
OUT
/
ΔT
opt
I
SC
R
PU
V
CEH
Topt=25°C
Item
Output Voltage
Output Current
Load Regulation
Dropout Voltage
Supply Current
Supply Current (Standby)
Line Regulation
Ripple Rejection
Input Voltage
Output Voltage
Temperature Coefficient
Short Current Limit
CE
Pull-up Resistance
Conditions
V
IN
=
Set V
OUT
+
1V
1mA
≤
I
OUT
≤
30mA
V
IN
−
Set V
OUT
= 1.0V
V
IN
=
Set V
OUT
+ 1V
1mA
≤
I
OUT
≤
80mA
Min.
V
OUT
×0.98
150
Typ.
Max.
V
OUT
×1.02
Unit
V
mA
12
40
mV
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
V
IN
=
Set V
OUT
+
1V
V
IN
=
V
CE
=
Set V
OUT
+
1V
Set V
OUT
+0.5V
≤
V
IN
≤
6.0V
I
OUT
=
30mA
f = 1kHz, Ripple 0.5Vp-p
V
IN
= Set V
OUT
+ 1V
100
0.1
0.05
80
170
1.0
μA
μA
0.20
I
OUT
=
30mA
−40°C
≤
Topt
≤
85°C
V
OUT
=
0V
CE Input Voltage “H”
CE
Input Voltage “L”
V
CEL
en
Output Noise
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
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L
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m
d
e
t
BW
=
10Hz to 100kHz
o
r
P
2.5
u
d
±100
30
5.0
6.0
t
c
V
%/V
dB
ppm/°C
mA
MΩ
10.0
1.5
0
V
IN
0.25
30
V
V
μ
Vrms
4
R1112N
•
R1112Nxx1B
Symbol
V
OUT
I
OUT
Δ
V
OUT
/
Δ
I
OUT
Topt=25°C
Item
Output Voltage
Output Current
Load Regulation
Dropout Voltage
Supply Current
Supply Current (Standby)
Line Regulation
Ripple Rejection
Input Voltage
Output Voltage
Temperature Coefficient
Short Current Limit
CE Pull-down Resistance
CE Input Voltage “H”
CE Input Voltage “L”
Output Noise
Conditions
V
IN
=
Set V
OUT
+
1V
1mA
≤
I
OUT
≤
30mA
V
IN
−
Set V
OUT
= 1.0V
V
IN
=
Set V
OUT
+
1V
1mA
≤
I
OUT
≤
80mA
Min.
V
OUT
×
0.98
150
Typ.
Max.
V
OUT
×
1.02
Unit
V
mA
12
40
mV
V
DIF
I
SS
Istandby
Δ
V
OUT
/
Δ
V
IN
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
V
IN
=
Set V
OUT
+
1V
V
IN
=
Set V
OUT
+
1V
V
CE
=GND
Set V
OUT
+
0.5V
≤
V
IN
≤
6.0V
I
OUT
=
30mA
f = 1kHz, Ripple 0.5Vp-p
V
IN
= Set V
OUT
+ 1V
100
0.1
0.05
80
170
1.0
μ
A
μ
A
RR
V
IN
Δ
V
OUT
/
Δ
T
I
OUT
=
30mA
−
40
°
C
≤
Topt
≤
85
°
C
V
OUT
=
0V
I
SC
R
PD
V
CEH
V
CEL
en
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
Topt = 25°C
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L
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m
d
e
t
BW
=
10Hz to 100kHz
o
r
P
2.5
1.5
0
u
d
±
100
30
t
c
6.0
10.0
V
IN
0.25
0.20
%/V
dB
V
ppm/
°
C
mA
M
Ω
V
V
μ
Vrms
5.0
30
Output Voltage
V
OUT
(V)
1.5
≤
V
OUT
≤
1.6
1.7
≤
V
OUT
≤
1.8
1.9
≤
V
OUT
≤
2.3
2.4
≤
V
OUT
≤
2.7
2.8
≤
V
OUT
≤
5.0
Dropout Voltage
V
DIF
(V)
Condition
Typ.
0.32
0.28
I
OUT
= 100mA
0.25
0.20
0.19
Max.
0.55
0.47
0.35
0.29
0.26
∗)
The products of the Set Vout
≤
1.8V, the operation may become unstable in case of V
IN
≤
2.0V, so please
use the products on condition that V
IN
≥
2.0V.
5
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