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BAT42WS

Description
0.1 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size369KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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BAT42WS Overview

0.1 A, 30 V, SILICON, SIGNAL DIODE

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR SCHOTTKY BARRIER DIODES
BAT42WS/BAT43WS
SOD-323
PLASTIC PCAKAGE
Marking Codes: BAT42WS= X9 with cathode band
BAT43WS= Y9 with cathode band
Low Forward Voltage Drop and Fast Switching
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Forward Continuous Current
Repetitive Peak Forward Current at t < 1s
Non Repetitive Peak Forward Surge Forward
Current at t < 10ms
Power Dissipation
Junction Temperature
Storage Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
R
th (j-a)
625
o
(T
a
=25ºC)
SYMBOL
V
RRM
V
R
I
O
I
FM
I
FRM
I
FSM
P
D
T
j
T
stg
VALUE
30
30
100
200
500
2.0
200
- 55 to +125
- 55 to +125
UNIT
V
V
mA
mA
mA
A
mW
o
o
C
C
C/W
CAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Reverse Breakdown Voltage
Reverse Current
Forward Voltage
SYMBOL
V
(BR)R
I
R
V
F
TEST CONDITION
I
R
=100µA
MIN
30
MAX
500
1.0
0.40
0.65
0.33
0.45
MAX
10
5
UNIT
V
nA
V
V
V
V
V
UNIT
pF
ns
V
R
=25V
I
F
=200mA
I
F
=10mA
BAT42WS
I
F
=50mA
BAT42WS
I
F
=2mA
BAT43WS
0.26
I
F
=15mA
BAT43WS
TEST CONDITION
V
R
=1V, f=1MHz
at I
F
= I
R
=10mA, I
RR
=0.1 X I
R
,
R
L
=100Ω
MIN
DYNAMIC CHARACTERISTICS
DESCRIPTION
Total Capacitance
Reverse Recovery Time
SYMBOL
C
T
t
rr
BAT42WS_43WS Rev020310E
Continental Device India Limited
Data Sheet
Page 1 of 4

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