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PESD24VS1UA

Description
Trans Voltage Suppressor Diode
CategoryDiscrete semiconductor    diode   
File Size533KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PESD24VS1UA Overview

Trans Voltage Suppressor Diode

PESD24VS1UA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionR-PDSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage27.5 V
Minimum breakdown voltage26.5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation160 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage24 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30

PESD24VS1UA Preview

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PESD24VS1UA
Unidirectional ESD protection diode
Rev. 1 — 7 March 2011
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD323 (SC-76) very
small Surface-Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and other transients.
1.2 Features and benefits
Unidirectional ESD protection of one line
Max. peak pulse power: P
PP
= 160 W
Ultra low leakage current: I
RM
< 1 nA
ESD protection up to 23 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 3 A
1.3 Applications
Computers and peripherals
Communication systems
Audio and video equipment
Data lines
Controller Area Network (CAN) bus protection
1.4 Quick reference data
Table 1.
Symbol
V
RWM
C
d
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
V
R
= 0 V; f = 1 MHz
Conditions
Min
-
-
Typ
-
23
Max
24
50
Unit
V
pF
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Graphic symbol
1
2
006aaa152
NXP Semiconductors
PESD24VS1UA
Unidirectional ESD protection diode
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD24VS1UA
SC-76
Description
plastic surface-mounted package; 2 leads
Version
SOD323
Type number
4. Marking
Table 4.
Marking codes
Marking code
2E
Type number
PESD24VS1UA
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
T
j
T
amb
T
stg
[1]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
μs
t
p
= 8/20
μs
[1]
[1]
Min
-
-
-
−65
−65
Max
160
3
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
PESD24VS1UA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2011
2 of 13
NXP Semiconductors
PESD24VS1UA
Unidirectional ESD protection diode
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883
(human body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[1]
Min
-
-
Max
23
10
Unit
kV
kV
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
μs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD24VS1UA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2011
3 of 13
NXP Semiconductors
PESD24VS1UA
Unidirectional ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
I
RM
V
BR
C
d
V
CL
Parameter
reverse standoff
voltage
reverse leakage
current
breakdown voltage
diode capacitance
clamping voltage
I
PP
= 1 A
I
PP
= 3 A
r
dyn
[1]
[2]
[3]
Conditions
Min
-
Typ
-
<1
27.0
23
-
-
1.53
Max
24
50
27.5
50
36
70
-
Unit
V
nA
V
pF
V
V
Ω
V
RWM
= 24 V
I
R
= 5 mA
f = 1 MHz; V
R
= 0 V
[1][2]
-
26.5
-
-
-
[2][3]
dynamic resistance
I
R
= 10 A
-
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to pin 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
10
4
P
pp
(W)
10
3
006aac519
1.2
P
PP
P
PP(25°C)
0.8
001aaa193
10
2
0.4
10
1
10
10
2
10
3
t
p
(μs)
10
4
0
0
50
100
150
T
j
(°C)
200
T
amb
= 25
°C
Fig 3.
Peak pulse power dissipation as a function of
pulse time; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
PESD24VS1UA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2011
4 of 13

PESD24VS1UA Related Products

PESD24VS1UA PESD24VS1UA,135
Description Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode
Maker Nexperia Nexperia
package instruction R-PDSO-G2 R-PDSO-G2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Maximum breakdown voltage 27.5 V 27.5 V
Minimum breakdown voltage 26.5 V 26.5 V
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-PDSO-G2 R-PDSO-G2
Maximum non-repetitive peak reverse power dissipation 160 W 160 W
Number of components 1 1
Number of terminals 2 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
polarity UNIDIRECTIONAL UNIDIRECTIONAL
Maximum repetitive peak reverse voltage 24 V 24 V
surface mount YES YES
technology AVALANCHE AVALANCHE
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
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