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PESD3V3S4UD

Description
Trans Voltage Suppressor Diode
CategoryDiscrete semiconductor    diode   
File Size213KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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PESD3V3S4UD Overview

Trans Voltage Suppressor Diode

PESD3V3S4UD Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionSC-74, TSOP-6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
Maximum breakdown voltage5.9 V
Minimum breakdown voltage5.3 V
ConfigurationCOMMON ANODE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation200 W
Number of components4
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage3.3 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30

PESD3V3S4UD Preview

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
Rev. 02 — 21 August 2009
Product data sheet
1. Product profile
1.1 General description
Quadruple ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package designed to protect up to 4 signal
lines from the damage caused by ESD and other transients.
1.2 Features
I
I
I
I
ESD protection of up to 4 lines
Max. peak pulse power: P
PP
= 200 W
Ultra low leakage current: I
RM
= 50 pA
Low clamping voltage: V
CL
= 12 V at
I
PP
= 20 A
I
ESD protection up to 30 kV
I
IEC 61000-4-2; level 4 (ESD)
I
IEC 61000-4-5; (surge); I
PP
up to 20 A
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Communication systems
I
Portable electronics
I
Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1.
Symbol
Per diode
V
RWM
reverse standoff voltage
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
-
-
-
-
-
-
-
-
-
-
3.3
5
12
15
24
V
V
V
V
V
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
Quick reference data
…continued
Parameter
diode capacitance
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
Conditions
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
215
165
73
60
45
300
220
100
90
70
pF
pF
pF
pF
pF
Min
Typ
Max
Unit
Table 1.
Symbol
C
d
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
cathode 1
common anode
cathode 2
cathode 3
common anode
cathode 4
1
2
3
6
5
4
1
2
3
006aaa156
Simplified outline
Symbol
6
5
4
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
SC-74
Description
plastic surface-mounted package (TSOP6);
6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
K4
K5
K6
K7
K8
Type number
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
PESDXS4UD_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 August 2009
2 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
Parameter
peak pulse power
peak pulse current
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
T
j
T
amb
T
stg
[1]
[2]
Conditions
t
p
= 8/20
µs
t
p
= 8/20
µs
[1][2]
[1][2]
Min
-
-
-
-
-
-
-
−65
−65
Max
200
20
20
10
6
4
150
+150
+150
Unit
W
A
A
A
A
A
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4 or 6 to 2 or 5
Table 6.
Symbol
V
ESD
ESD maximum ratings
Parameter
electrostatic discharge voltage
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
PESDxS4UD series
HBM MIL-STD-883
Conditions
IEC 61000-4-2
(contact discharge)
[1][2]
Min
Max
Unit
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4 or 6 to 2 or 5
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 10 kV
IEC 61000-4-2; level 4 (ESD)
HBM MIL-STD-883; class 3
PESDXS4UD_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 August 2009
3 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
Per diode
V
RWM
reverse standoff voltage
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
I
RM
reverse leakage current
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
V
BR
breakdown voltage
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
V
RWM
= 3.3 V
V
RWM
= 5 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 1 mA
5.3
6.4
12.5
15.5
25.5
5.6
6.8
14.5
18
27
5.9
7.2
16
20.5
29
V
V
V
V
V
-
-
-
-
-
300
80
0.05
0.05
0.05
800
200
15
15
15
nA
nA
nA
nA
nA
-
-
-
-
-
-
-
-
-
-
3.3
5
12
15
24
V
V
V
V
V
Parameter
Conditions
Min
Typ
Max
Unit
PESDXS4UD_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 August 2009
4 of 12

PESD3V3S4UD Related Products

PESD3V3S4UD PESD15VS4UD PESD24VS4UD PESD5V0S4UD
Description Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode
Is it Rohs certified? conform to conform to conform to conform to
Maker Nexperia Nexperia Nexperia Nexperia
package instruction SC-74, TSOP-6 SC-74, TSOP-6 SC-74, TSOP-6 SC-74, TSOP-6
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
Maximum breakdown voltage 5.9 V 20.5 V 29 V 7.2 V
Minimum breakdown voltage 5.3 V 15.5 V 25.5 V 6.4 V
Configuration COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Maximum non-repetitive peak reverse power dissipation 200 W 200 W 200 W 200 W
Number of components 4 4 4 4
Number of terminals 6 6 6 6
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Maximum repetitive peak reverse voltage 3.3 V 15 V 24 V 5 V
surface mount YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 30
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