INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
2N4909
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(sat)
= -0.75V(Max.)@ I
C
= -4A
·DC
Current Gain-
: h
FE
= 20-80 @I
C
= -4A
APPLICATIONS
·Designed
for general purpose use in power amplifier and
switching circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
-80
-80
-5
-10
-4
150
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2N4909
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= -200mA ; I
B
= 0
-80
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -4A; I
B
= -0.4A
-0.75
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -4A; I
B
= -0.4A
-1.5
V
V
BE(
on
)
I
CEO
Base-Emitter On Voltage
I
C
= -4A; V
CE
= -4V
-1.5
V
Collector Cutoff Current
V
CE
= -80V; I
B
= 0
-1.0
mA
I
CBO
Collector Cutoff Current
V
CB
= -80V; I
E
= 0
V
CE
= -80V; V
BE(
off
)
= -1.5V
V
CE
= -80V; V
BE(
off
)
= -1.5V, T
C
=150℃
V
EB
= -5V; I
C
= 0
-0.1
-0.1
-2.0
-1.0
mA
I
CEX
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
mA
h
FE-1
DC Current Gain
I
C
= -4A; V
CE
= -4V
20
80
h
FE-2
DC Current Gain
I
C
= -10A; V
CE
= -4V
5
f
T
Current-Gain—Bandwidth Product
I
C
= -1A; V
CE
= -10V; f
test
= 1.0MHz
4
MHz
isc Website：www.iscsemi.cn
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