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P6KE62

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size119KB,4 Pages
ManufacturerBWTECH
Websitehttp://www.bruckewell-semi.com
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P6KE62 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

P6KE SERIES
V
BR
: 6.8 - 600 Volts
P
PK
: 600 Watts
FEATURES :
*
*
*
*
*
Glass passivated jungtion chip
600W surge capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time : typically less
then 1.0 ps from 0 volt to V
BR(min.)
* Typical I
R
less then 1μA above 10V
* Pb / RoHS Free
TRANSIENT VOLTAGE
SUPPRESSOR
DO-15
0.142 (3.6)
0.102 (2.6)
1.00 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : DO-15 Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.4 gram
Dimensions in inches and ( millimeters )
DEVICES FOR BIPOLAR APPLICATIONS
For Bi-directional use C or CA Suffix
Electrical characteristics apply in both directions
MAXIMUM RATINGS
Rating at 25
°C
ambient temperature unless otherwise specified.
Rating
Peak Power Dissipation at Ta = 25
°C,
Tp=1ms (Note1)
Steady State Power Dissipation at T
L
= 75
°C
Lead Lengths 0.375", (9.5mm) (Note 2)
Peak Forward Surge Current, 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
(JEDEC Method) (Note 3) Unidirectional only
Operating and Storage Temperature Range
Notes :
Symbol
P
PK
P
D
Value
Minimum 600
5.0
Unit
W
W
I
FSM
100
A
T
J
, T
STG
- 65 to + 175
°C
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25
°C
per Fig. 1
(2) Mounted on Copper Leaf area of 1.57 in
2
(40mm
2
).
(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minutes maximum and V
B
>220V, I
FSM
is 50 A.
Page 1 of 4
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