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MT28F640J3RP-12ET

Description
Flash, 4MX16, 120ns, PDSO56, LEAD FREE, PLASTIC, TSOP1-56
Categorystorage    storage   
File Size718KB,56 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT28F640J3RP-12ET Overview

Flash, 4MX16, 120ns, PDSO56, LEAD FREE, PLASTIC, TSOP1-56

MT28F640J3RP-12ET Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeTSOP1
package instructionTSOP1, TSSOP56,.8,20
Contacts56
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time120 ns
Spare memory width8
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G56
JESD-609 codee3
length18.4 mm
memory density67108864 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size64
Number of terminals56
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP56,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
page size4/8 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size128K
Maximum standby current0.00012 A
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
switch bitNO
typeNOR TYPE
width14 mm
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
Q-FLASH
MEMORY
Features
TM
MT28F128J3, MT28F640J3,
MT28F320J3
x8/x16 organization
One hundred twenty-eight 128KB erase blocks (128Mb)
• Sixty-four 128KB erase blocks (64Mb)
• Thirty-two 128KB erase blocks (32Mb)
V
CC
, V
CC
Q, and V
PEN
voltages:
• 2.7V to 3.6V V
CC
operation
• 2.7V to 3.6V, or 5V V
PEN
application programming
Interface Asynchronous Page Mode Reads:
• 150ns/25ns or 120ns/25ns read access time (128Mb)
• 120ns/25ns or 115ns/25ns read access time (64Mb)
• 110ns/25ns read access time (32Mb)
Manufacturing ID (ManID)
• Intel
Ò
(0x89h)
• Micron
Ò
(0x2Ch)
Industry-standard pinout
Inputs and outputs are fully TTL-compatible
Common Flash Interface (CFI) and Scalable
Command Set
Automatic write and erase algorithm
5.6µs-per-byte effective programming time using write
buffer
128-bit protection register
• 64-bit unique device identifier
• 64-bit user-programmable OTP cells
Enhanced data protection feature with V
PEN
= V
SS
• Flexible sector locking
• Sector erase/program lockout during power
transition
Security OTP block feature
• Permanent block locking
(Contact factory for availability)
100,000 ERASE cycles per block
Automatic suspend options:
• Block Erase Suspend-to-Read
• Block Erase Suspend-to-Program
• Program Suspend-to-Read
Figure 1: 56-Pin TSOP Type I
Figure 2: 64-Ball FBGA
Options
Timing
• 110ns (32Mb)
• 115ns (64Mb)
• 120ns (64Mb)
• 120ns (128Mb)
• 150ns (128Mb)
Operating Temperature Range
• Commercial Temperature
(0°C to +85°C)
• Extended Temperature (-40°C to +85°C)
Packages
• 56-pin (Standard) TSOP Type I
• 56-pin (Lead-free) TSOP Type I
• 64-ball (Standard) FBGA (1.00mm
pitch)
• 64-ball (Lead-free) FBGA (1.00mm
pitch)
Manufacturing ID (ManID)
• Intel (0x89h)
• Micron (0x2Ch)
Marking
-11
-115
-12
-12
-15
None
ET
RG
RP
FS
BS
None
M
Part Number Example:
MT28F640J3RG-12ET
09005aef80b5a323
MT28F640J3_J.fm - Rev. J 11/03 EN
1
©2003 Micron Technology, Inc.
PRODUCTS
AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.

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