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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
CR02AM-8
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2
t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
Tj
Tstg
—
Ratings
0.47
0.3
10
0.4
0.1
0.01
6
6
0.1
– 40 to +125
– 40 to +125
0.23
Unit
A
A
A
A
2
s
W
W
V
V
A
°C
°C
g
Conditions
Commercial frequency, sine half wave
180° conduction, Ta = 30°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. With gate to cathode resistance R
GK
= 1 kΩ.
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-a)
Min.
—
—
—
—
0.2
1
—
—
Typ.
—
—
—
—
—
—
—
—
Max.
0.1
0.1
1.6
0.8
—
100
Note2
3
180
Unit
mA
mA
V
V
V
µA
mA
°C/W
Test conditions
Tj = 125°C, V
RRM
applied
Tj = 125°C, V
DRM
applied,
R
GK
= 1 kΩ
Ta = 25°C, I
TM
= 0.6 A,
instantaneous value
Tj = 25°C, V
D
= 6 V,
Note3
I
T
= 0.1 A
Tj = 125°C, V
D
= 1/2 V
DRM
,
R
GK
= 1 kΩ
Tj = 25°C, V
D
= 6 V,
Note3
I
T
= 0.1 A
Tj = 25°C, V
D
= 12 V,
R
GK
= 1 kΩ
Junction to ambient
Notes: 2. If special values of I
GT
are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
I
GT
(µA)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 1 kΩ resistance between the gate and
cathode.
3. I
GT
, V
GT
measurement circuit.
A1
I
GS
3V
DC
A3
R
GK
1
1kΩ
Switch
I
GT
A2
2
V1
V
GT
TUT
6V
DC
60Ω
Switch 1 : I
GT
measurement
Switch 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
Rev.2.00,
Mar.01.2005,
page 2 of 7
Embedded System
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