BC817W-16 datasheet, PDF - EEWORLD Datasheet

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BC817W-16: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size595KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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BC817W-16 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN

BC817W-16 Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	USM, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

BC817W

EPITAXIAL PLANAR NPN TRANSISTOR

E

FEATURES

・Complementary

to BC807W.

A

J

M

B

M

2

G

D

1

3

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

E

P

C

T

j

T

stg

RATING

50

45

5

500

-500

100

150

-55½150

UNIT

P

H

N

K

N

V

mA

mW

℃

1. EMITTER

2. BASE

3. COLLECTOR

DIM

A

B

C

D

E

G

H

J

K

L

M

N

P

MILLIMETERS

_

2.00 + 0.20

_ 0.15

1.25 +

_

0.90 + 0.10

0.3+0.10/-0.05

_

2.10 + 0.20

0.65

0.15+0.1/-0.06

1.30

0.00~0.10

0.70

_

0.42 + 0.10

0.10 MIN

0.1 MAX

C

L

USM

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain (Note)

h

FE

(2)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

Note : h

FE

(1) Classification

V

CE(sat)

V

BE

f

T

C

ob

V

CE

=1V, I

C

=500mA

I

C

=500mA, I

B

=50mA

V

CE

=1V, I

C

=500mA

V

CE

=5V, I

C

=10mA, f=100MHz

V

CB

=10V, I

E

=0, f=1MHz

40

-

100

-

5

-

0.7

1.2

-

V

MHz

pF

SYMBOL

I

CBO

I

EBO

h

FE

(1)

TEST CONDITION

V

CB

=20V, I

E

=0

V

EB

=5V, I

C

=0

V

CE

=1V, I

C

=100mA

MIN.

-

100

TYP.

-

MAX.

0.1

630

UNIT

μ

A

μ

A

16:100½250 , 25:160½400 , 40:250½630

MARK SPEC

TYPE

MARK

BC817W-16

2M

BC817W-25

2N

BC817W-40

2R

2008. 9. 2

Revision No : 0

1/2

BC817W-16 Related Products

	BC817W-16	BC817W-40	BC817W-25
Description	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN
package instruction	USM, 3 PIN	USM, 3 PIN	USM, 3 PIN
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	45 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40	40
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz
Maker	KEC	-	KEC

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