UNISONIC TECHNOLOGIES CO., LTD
10N70T
10A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The
UTC 10N70T
is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
Preliminary
Power MOSFET
FEATURES
* R
DS(ON)
=1.2Ω@V
GS
=10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N70TL-TF3-T
10N70TG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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QW-R502-877.a
10N70T
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
10
A
10
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
40
A
700
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
50
W
P
D
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25
Ω
Starting T
J
= 25°C
4. I
SD
≤
9.5A, di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATING
62.5
2.5
UNIT
°C/W
°C/W
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QW-R502-877.a
10N70T
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Preliminary
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
V
GS
= 0V, I
D
= 250μA
700
V
V
DS
= 700V, V
GS
= 0V
10
µA
100 nA
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
-100 nA
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
= 250 µA, Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 5A
0.8 1.2
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
1570 2040 pF
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
166 215 pF
Reverse Transfer Capacitance
C
RSS
18
24
pF
SWITCHING CHARACTERISTICS
23
55
ns
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
69 140 ns
V
DD
=350V, I
D
=10A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
144 300 ns
Turn-Off Fall Time
t
F
75 160 ns
44
57
nC
Total Gate Charge
Q
G
V
DS
=560V, I
D
=10A, V
GS
=10 V
Gate-Source Charge
Q
GS
6.7
nC
(Note 1, 2)
Gate-Drain Charge
Q
GD
18.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
=10A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
10
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
40
A
Forward Current
420
ns
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 10A,
dI
F
/ dt = 100 A/µs (Note 1)
Reverse Recovery Charge
Q
RR
4.2
µC
Notes: 1. Pulse Test : Pulse width
≤300µs,
Duty cycle
≤2%
2. Essentially independent of operating temperature
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QW-R502-877.a
10N70T
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-877.a
10N70T
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-877.a
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