0.2A, 30V, SILICON, SIGNAL DIODE
| Parameter Name | Attribute value |
| Maker | STMicroelectronics |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.45 V |
| JESD-30 code | O-LALF-W2 |
| Maximum non-repetitive peak forward current | 4 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 0.2 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.2 W |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 30 V |
| Maximum reverse current | 0.5 µA |
| Maximum reverse recovery time | 0.005 µs |
| surface mount | NO |
| technology | SCHOTTKY |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| BAT43AR1 | BAT43AZ1 | BAT43B2 | BAT42B2 | BAT43AZ2 | BAT43AR2 | BAT42AZ1 | BAT42AR2 | BAT42AR1 | BAT42AZ2 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | 0.2A, 30V, SILICON, SIGNAL DIODE | 0.2A, 30V, SILICON, SIGNAL DIODE | 0.2A, 30V, SILICON, SIGNAL DIODE | 0.2A, 30V, SILICON, SIGNAL DIODE | 0.2A, 30V, SILICON, SIGNAL DIODE | 0.2A, 30V, SILICON, SIGNAL DIODE | 0.2A, 30V, SILICON, SIGNAL DIODE | 0.2A, 30V, SILICON, SIGNAL DIODE | 0.2A, 30V, SILICON, SIGNAL DIODE | 0.2A, 30V, SILICON, SIGNAL DIODE |
| package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.45 V | 0.45 V | 0.45 V | 0.65 V | 0.45 V | 0.45 V | 0.65 V | 0.65 V | 0.65 V | 0.65 V |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Maximum non-repetitive peak forward current | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
| Maximum output current | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Maximum power dissipation | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| Maximum reverse current | 0.5 µA | 0.5 µA | 0.5 µA | 0.5 µA | 0.5 µA | 0.5 µA | 0.5 µA | 0.5 µA | 0.5 µA | 0.5 µA |
| Maximum reverse recovery time | 0.005 µs | 0.005 µs | 0.005 µs | 0.005 µs | 0.005 µs | 0.005 µs | 0.005 µs | 0.005 µs | 0.005 µs | 0.005 µs |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| technology | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Maker | STMicroelectronics | - | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |