SEMICONDUCTOR
2SA1943BL Series
Silicon PNP triple diffusion planar transistor
-15A/-230V/150W
RoHS
RoHS
Nell High Power Products
20.00±0.20
18.00
ø3.30±0.20
5.00
3.00
2.00
9.00
4.00
6.00
20.50
26.00
TO-3PL
2.50
(typ. )
3.00
FEATURES
High breakdown voltage, V
CEO
= -230V (min)
Complementary to 2SC5200BL
TO-3PL package which can be installed to the
heat sink with one screw
5.45±0.05
1.00
(typ. )
2.50
0.60
5.45±0.05
3.20
APPLICATIONS
Suitable for use in 100W high fidelity audio
amplifier’s output stage
1
2
3
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
B
C
E
PNP
All dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS (T
a
= 25°C)
SYMBOL
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
t
p
≤ 5
ms
PARAMETER
VALUE
-230
-230
-5
-30
-15
-1.5
T
C
= 25°C
150
150
UNIT
V
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
A
W
ºC
-55 to 150
THERMAL CHARACTERISTICS (T
C
= 25°C)
SYMBOL
R
th(j-c)
PARAMETER
Maximum thermal resistance, junction to case
VALUE
1.10
UNIT
ºC/W
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Page 1 of 3
SEMICONDUCTOR
2SA1943BL Series
RoHS
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
VALUE
SYMBOL
PARAMETER
Collector cutoff current
Emitter cutoff current
CONDITIONS
MIN.
I
CBO
I
EBO
V
(BR)CEO
V
CBO
V
EBO
V
CBO
= -230V, l
E
= 0
V
EBO
= -5V, l
C
= 0
-230
-230
-5
Rank-R
h
FE
1
Forward current transfer ratio
(DC current gain)
h
FE
2
V
CE(sat)
V
BE
f
T
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
(Gain-Bandwidth product)
Collector output capacitance
V
CE
= -5V, I
C
= -7A
l
C
= -8A, I
B
= -0.8A
V
CE
= -5V, I
C
= -7A
V
CE
= -5V, I
C
= -1A
V
CB
= -10V, I
E
=
0,
f
= 1MHz
V
CE
= -5V, I
C
= -1A
Rank-O
80
160
55
110
V
TYP.
MAX.
-5.0
µA
-5.0
UNIT
Collector to emitter breakdown voltage l
CEO
= -50mA, I
B
= 0
Collector to base voltage
Emitter to base voltage
l
CBO
= -100 µA
l
EBO
= -100 µA
35
60
-1.5
-1.0
-3.0
V
-1.5
30
MHz
pF
C
ob
360
ORDERING INFORMATION SCHEME
2SA 1943
Transistor series
PNP Type
BL - R
Current & Voltage rating, I
C
& V
CEO
-15A / -230V
Package type
BL
=
TO-3PL
DC current gain rank, h
FE
1
R
= 55 ~ 110
O
= 80 ~ 160
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Page 2 of 3
SEMICONDUCTOR
2SA1943BL Series
RoHS
RoHS
Nell High Power Products
Fig.1 I
C
- V
CE
-20
Common emitter
T
C
= 25°C
Fig.2 V
CE (sat)
- I
C
-3
-800
Common emitter
I
C
/ I
B
= 10
Collector current, l
C
(A)
Collector-emitter saturation
voltace, V
CE (Sat)
(V)
-16
00
-6
0
-40
-250
-200
-1
-12
-150
-0.3
T
C
=100°C
T
C
= -25°C
T
C
= 25°C
-8
-100
-0.1
-4
-50
-40
-30
-20
I
B
=-10mA
0
0
-2
-4
-6
-8
-10
-0.01
-0.1
-1
-10
-100
Collector-emitter voltage, V
CE
(V)
Collector current, l
C
(A)
Fig.3 I
C
-V
BE
-20
Common emitter
V
CE
= -5V
300
Fig.4 DC current gain
T
C
= 100°C
Collector current, I
C
(A)
DC current gain, h
FE
-16
100
T
C
= 25°C
T
C
= -25°C
-12
T
C
= 100°C
30
-8
10
-4
T
C
= 25°C
T
C
= -25°C
3
Common emitter
V
CE
= -5V
-0.1
-1
-10
-100
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
1
-0.01
Base-emitter voltage, V
BE
(V)
Collector current, l
C
(A)
Fig.5 Safe operating area
-50
-30
l
C
max (pulsed)*
1 ms*
l
C
max (continuous)
10 ms*
Collector current, l
C
(A)
-10
-5
-3
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-3
DC operation
T
C
= 25°C
100 ms*
* Single nonrepetitive
pulse T
C
= 25°C
Curves must be derated
linearly with increase in
temperature.
V
CEO
max.
-10
-30
-100
-300
Collector-Emitter voltage, V
CE
(V)
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Page 3 of 3
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