UNISONIC TECHNOLOGIES CO., LTD
33N25
33A, 250V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
33N25
is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a minimum
on-state resistance, low gate charge and high switching speed.
The UTC
33N25
is suitable for high voltage synchronous rectifier
and DC/DC converters, etc.
Preliminary
Power MOSFET
FEATURES
* R
DS(ON)
<80mΩ @ V
GS
=10V,I
D
=33A
* Low Gate Charge (Typical 18.5nC)
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
33N25L-T47-T
33N25G-T47-T
Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-247
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Note:
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Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-814.a
33N25
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
250
V
Gate-Source Voltage
V
GSS
±20
V
Continuous
I
D
33
A
(V
GS
=10V) T
C
=25°C
Drain Current
Pulsed
I
DM
132
A
Single Pulsed Avalanche Energy (Note 2)
E
AS
918
mJ
Power Dissipation
235
W
P
D
Derate above 25°C
1.89
mW/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting T
J
= 25°C, L = 1.35mH, I
AS
= 33A, V
DD
=50V, R
G
=25Ω.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.53
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage
Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=250V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=33A
V
GS
=6V, I
D
=15A
MIN TYP MAX UNIT
250
V
1
µA
+100 nA
-100 nA
4
80
72
V
mΩ
mΩ
pF
pF
pF
28
nC
nC
nC
ns
ns
ns
ns
V
2
32
40
1250
190
45
18.5
6.5
4.6
35
230
75
120
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge at 10V
Q
G
V
GS
=10V,V
DD
=50V,I
D
=33A,I
G
=1.0mA
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Time
t
ON
Turn-ON Delay Time
t
D(ON)
V
DD
=50V, I
D
=33A, V
GS
=10V,
R
GS
=16Ω
Rise Time
t
R
Turn-OFF Delay Time
t
D(OFF)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
SD
=33A
Notes: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration=300µs, Duty cycle
≤2%
80
1.4
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-814.a
33N25
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
GS
Q
G
10V
V
DS
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
V
DS
R
G
I
D
BV
DSS
L
I
AS
Resistive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-814.a
33N25
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
DUT
R
G
V
GS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-814.a
33N25
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-814.a
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