LX3044 / 45 / 46
I N T E G R A T E D
P R O D U C T S
10.3 Gbps Coplanar GaAs PIN Photo Diode
P
RODUCTION
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
LX3044 Single Die
LX3045, 1x4 Array Die
LX3046, 1x12 Array Die
Coplanar Waveguide , 50ohm
High Responsivity
Low Dark Current
High Bandwidth
Anode/Cathode on Illuminated
Side
125mm Pad pitch
Die Good for Bond Wire or Flip
Chip Applications
APPLICATIONS
Microsemi’s GaAs Coplanar PIN
Photo Diode chips are ideal for high
bandwidth 850nm optical networking
applications.
The device family offers superior
noise performance and sensitivity in
single die, 1x4 array die or 1x12 array
die.
The LX304X family of photo diodes
are currently offered in die form
allowing manufacturers the versatility
of custom assembly using either bond
wire or flip chip configurations.
This
device
is
ideal
for
manufacturers of optical receivers,
transponders,
optical
transmission
modules and combination PIN photo
diode – transimpedance amplifier.
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Microsemi
.C
OM
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
Short Reach Optical Networks
10Gigabit Ethernet, Fibre
Channel
VCSEL Array Receiver
BENEFITS
Large Wirebond Contact Pads
Low Contact Resistance
PRODUCT HIGHLIGHT
Coplanar Design (gnd-signal-gnd) 50 ohm
characteristic impedance
125 um standard pad pitch for ease of test
Large 75um x 75um pad size for ease of
packaging
Wire bond or Flip Chip capability
Single Die
1x4 Die
1x12 Die
PACKAGE ORDER INFO
Die Dimension
1
Pad Dimension
1
Active Area, A
Pad Pitch, p
1
Die Thickness
1
(µm)
(µm)
(µm)
(µm)
(µm)
LX304
X
LX304
X
T
J
(°C)
0 to 70
Die
Die
LX3044
LX3045
LX3046
75
Y
450
450
450
X
450
1200
3200
w
75
75
75
v
75
75
75
125
125
125
152
203
203
1. See Package Dimensions (page 4)
Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. LX3044T)
Copyright
2000
Rev. 1.0, 2002-10-29
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX3044 / 45 / 46
I N T E G R A T E D
P R O D U C T S
10.3 Gbps Coplanar GaAs PIN Photo Diode
P
RODUCTION
D
ATA
S
HEET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the following test conditions: T
A
= 25oC, V
R
= 5 Volts
Parameter
MAXIMUM RATINGS
Operating Junction Temperature
Range
Storage Temperature Range
Maximum Soldering Temperature
ELECTRICAL CHARACTERISTICS
Active Area Diameter
Responsivity
Dark Current
Breakdown Voltage
Capacitance
Bandwidth (1)
RF Cross-Talk
Note:
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Microsemi
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OM
Symbol
Test Conditions
Min
-20
-55
LX304x
Typ
Max
+100
+125
260
Units
T
J
T
STG
10 seconds maximum at temperature
°C
°C
°C
µm
A/W
nA
Volts
pF
GHz
dB
R
I
D
BV
R
C
BW
S
21
V
R
= 5V,
λ=
850nm
V
R
= 5V
I
R
= 2µA
V
R
= 5V
V
R
= 5V,
λ=
850nm @ -3dB
1x4 and 1x12array only @ 10GHz
0.55
30
7.8
75
0.6
0.1
47
0.3
8.1
0.5
0.33
-40
1. Bandwidth is measured at –3dB electrical power (photocurrent drops to 71% of DC value) into a 50Ω load.
CIRCUIT MODEL
R
ser
C
shunt
L
ser
C
diode
R
diode
Part #
LX304x
Rser (Ω)
12.3
Lser (nH)
0.12
Cshunt (fF)
118.5
Cdiode (fF)
172
Rdiode (MΩ)
187
E
LECTRICALS
E
LECTRICALS
Copyright
2000
Rev. 1.0, 2002-10-29
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX3044 / 45 / 46
I N T E G R A T E D
P R O D U C T S
10.3 Gbps Coplanar GaAs PIN Photo Diode
P
RODUCTION
D
ATA
S
HEET
CHARACTERISTIC CURVES
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Microsemi
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OM
LX3044/5/6 CV
10.000
Dark Current vs Voltage over Temperature
0.38
0.37
0.36
0.35
0.34
0.33
0.32
0.31
0.3
0.29
0.28
0.27
0.26
0 1 2 3 4 5 6 7 8 9 10
V
1.000
ID (nA)
-30 Deg C
-10 Deg C
25 Deg C
50 Deg C
85 Deg C
110 Deg C
C (pF)
C@85oC (pF)
C@25oC (pF)
0.100
0.010
0.0 V
2.0 V
4.0 V
6.0 V
8.0 V
Bias Voltage (V)
10.0 V
12.0 V
14.0 V
16.0 V
Calibrated BW vs Temperature LX3044
60.00
BVR @ IR=2UA
5
50.00
Relative S21 (dB)
0
40.00
-5
BV (V)
MAX
AVG
MIN
L LIMIT
-10
25C
-15
-20
0.0E+ 1.0E+ 2.0E+ 3.0E+ 4.0E+ 5.0E+ 6.0E+ 7.0E+ 8.0E+ 9.0E+ 1.0E+
00
09
09
09
09
09
09
09
09
09
10
30.00
85C
5C
20.00
10.00
0.00
frequency (Hz)
-40
-20
0
20
40
60
80
100
120
Temperature
LX3046 RF-Crosstalk
-30
-40
Crosstalk (dB)
-50
-60
-70
-80
-90
0.0E+00
5.0E+09
1.0E+10
Frequency (Hz)
Top (7,8)
Center (6,7)
Bottom (6,7)
Left (6,7)
Right (6,7)
C
HARTS
C
HARTS
1.5E+10
2.0E+10
Copyright
2000
Rev. 1.0, 2002-10-29
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX3044 / 45 / 46
I N T E G R A T E D
P R O D U C T S
10.3 Gbps Coplanar GaAs PIN Photo Diode
P
RODUCTION
D
ATA
S
HEET
PACKAGE DIMENSIONS
WWW .
Microsemi
.C
OM
Die
LX304x
contact
n
contact
n
P
ACKAGE
P
ACKAGE
Copyright
2000
Rev. 1.0, 2002-10-29
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX3044 / 45 / 46
I N T E G R A T E D
P R O D U C T S
10.3 Gbps Coplanar GaAs PIN Photo Diode
P
RODUCTION
D
ATA
S
HEET
NOTES
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Microsemi
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OM
N
OTES
N
OTES
PRODUCTION DATA – Information contained in this document is proprietary to
Microsemi and is current as of publication date. This document may not be modified in
any way without the express written consent of Microsemi. Product processing does not
necessarily include testing of all parameters. Microsemi reserves the right to change the
configuration and performance of the product and to discontinue product at any time.
Copyright
2000
Rev. 1.0, 2002-10-29
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
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