UNISONIC TECHNOLOGIES CO., LTD
5N25
Preliminary
Power MOSFET
3.8A, 250V LOGIC
N-CHANNEL MOSFET
DESCRIPTION
The UTC
5N25
is an N-Channel enhancement MOSFET, it uses
UTC’s advanced technology to provide customers with a minimum
on-state resistance, high switching speed and low gate charge. It can
also withstand high energy pulse in the avalanche and commutation
modes.
The UTC
5N25
is suitable for high efficiency switching DC/DC
converter, motor control and switch mode power supply.
FEATURES
* R
DS(ON)
<1.2Ω @V
GS
=10V
* Low gate charge ( Typ=14nC)
* Low C
RSS
( Typ=6.0pF)
* High switching speed
SYMBOL
ORDERING INFORMATION
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
5N25L-TN3-T
5N25G-TN3-T
5N25L-TN3-R
5N25G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING INFORMATION
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Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-852.b
5N25
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise noted)
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
W
W/°C
°C
°C
damaged.
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
V
DSS
250
Gate-Source Voltage
V
GSS
±20
Continuous
I
D
3.8
Drain Current
Pulsed (Note 2)
I
DM
9
Avalanche Current (Note 2)
I
AR
3.8
Single Pulsed (Note 3)
E
AS
85
Avalanche Energy
Repetitive (Note 2)
E
AR
3.7
Peak Diode Recovery dv/dt (Note 4)
dv/dt
5.5
T
A
=25°C
2.5
P
D
Power Dissipation T
C
=25°C
37
Derate above 25°C
0.29
Junction Temperature
T
J
-55~+150
Storage Temperature Range
T
STG
-55~+150
Notes:
Absolute maximum ratings are those values beyond which the device could be permanently
1.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=6.2mH, I
AS
=3.8A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C.
4. I
SD
≤4.5A,
di/dt≤300A/µs, V
DD
≤BV
DSS
, Starting T
J
=25°C.
THERMAL CHARACTERISTICS
RATINGS
50
110
3.4
UNIT
°C/W
°C/W
°C/W
PARAMETER
SYMBOL
Junction to Ambient (Note)
θ
JA
Junction to Ambient
Junction to Case
θ
JC
Note: When mounted on the minimum pad size recommended (PCB Mount)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-852.b
5N25
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
MIN TYP MAX UNIT
250
0.18
V
V/°C
1
µA
+100 nA
-100 nA
2
4
0.74 1.2
0.92 1.25
3.35
250
40
6
14
1.2
2.4
28
24
80
20
325
50
8
20
V
Ω
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
Coefficient
Drain-Source Leakage Current
I
DSS
V
DS
=250V, V
GS
=0V
Forward
V
GS
=+20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=1.9A
Static Drain-Source On-State Resistance
R
DS(ON)
(Note 1)
V
GS
=5V, I
D
=1.9A
Forward Transconductance
g
FS
V
DS
=30V, I
D
=1.9A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=5V, V
DS
=160V, I
D
=4.5A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=100V, I
D
=4.5A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=3.8A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
I
S
=4.5A, V
GS
=0V, dI
F
/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%
2. Essentially independent of operating temperature
40
80
110
90
3.8
9
1.5
95
0.3
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-852.b
5N25
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
300nF
V
DS
V
GS
Q
G
5V
Q
GS
Q
GD
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-852.b
5N25
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-852.b
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