UNISONIC TECHNOLOGIES CO., LTD
5N50K
5A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
5N50K
is an N-channel power MOSFET adopting
UTC’s advanced technology to provide customers with DMOS,
planar stripe technology. This technology is designed to meet the
requirements of the minimum on-state resistance and perfect
switching performance. It also can withstand high energy pulse in
the avalanche and communication mode.
The UTC
5N50K
can be used in applications, such as active
power factor correction, high efficiency switched mode power
supplies, electronic lamp ballasts based on half bridge topology.
1
Power MOSFET
TO-220F
FEATURES
* R
DS(ON)
= 1.4Ω @V
GS
= 10 V
* 100% avalanche tested
* High switching speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N50KL-TF3-T
5N50KG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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Copyright © 2012 Unisonic Technologies Co., Ltd
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QW-R502-870.A
5N50K
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±30
V
5
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
20
A
Avalanche Current (Note 2)
I
AR
5
A
270
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
7.3
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
38
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 21.5mH, I
AS
= 5.2A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤5A,
di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
3.25
UNIT
°C/W
°C/W
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QW-R502-870.A
5N50K
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
V
DS
=500V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=400V, T
C
=125°C
Forward
V
GS
=30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=400V,
Gate to Source Charge
Q
GS
I
D
=5A (Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=250V, I
D
=5A,
R
G
=25Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage
V
SD
I
S
=5A, V
GS
=0V
Reverse Recovery Time
t
rr
I
S
=5A, V
GS
=0V,
dI
F
/dt=100A/µs (Note 1)
Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
500
0.5
1
10
100
-100
2.0
1.2
480
80
15
18
2.2
9.7
12
46
50
48
4.0
1.4
625
105
20
24
V
V/°C
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
35
100
110
105
5
20
1.4
263
1.9
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VER.a
5N50K
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
V
DS
R
G
I
D
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-870.A
5N50K
TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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QW-R502-870.A
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