UNISONIC TECHNOLOGIES CO., LTD
5N65K
5A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
5N65K
is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications at power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
Power MOSFET
TO-220F
FEATURES
* R
DS(ON)
= 2.4Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( Typical 15 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 6.5 pF )
* Fast Switching Capability
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N65KL-TF3-T
5N65KG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
5N65KL-TF3-T
(1)Packing Type
(2)Package Type
(3)Lead Free
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
(1) T: Tube
(2) TF3: TO-220F
(3) G: Halogen Free, L: Lead Free
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QW-R502-871.A
5N65K
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
5
A
Continuous Drain Current
I
D
5
A
Pulsed Drain Current (Note 2)
I
DM
20
A
100
Single Pulsed (Note 3)
E
AS
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
10
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
36
W
Junction Temperature
T
J
+150
°C
Operation Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L = 8mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
5A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
3.47
UNIT
°C/W
°C/W
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QW-R502-871.A
5N65K
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
V
GS
=0V, I
D
= 250μA
650
V
V
DS
=650V, V
GS
= 0V
1
μA
100
Forward
V
GS
=30V, V
DS
= 0V
nA
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
= 0V
-100
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25℃
0.6
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
= 2.5A
2.0 2.4
Ω
DYNAMIC CHARACTERISTICS
515 670 pF
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
55
72
pF
f = 1.0MHz
Reverse Transfer Capacitance
C
RSS
6.5 8.5 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
10
30
ns
Turn-On Rise Time
t
R
42
90
ns
V
DD
= 325V, I
D
=5A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
38
85
ns
Turn-Off Fall Time
t
F
46 100 ns
Total Gate Charge
Q
G
15
19
nC
V
DS
= 520 V, I
D
= 5A,
Gate-Source Charge
Q
GS
2.5
nC
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
6.6
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 5A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
5
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
20
A
Forward Current
Reverse Recovery Time
t
rr
300
ns
V
GS
= 0 V, I
S
=5A,
d
IF
/ dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
2.2
μC
Note 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
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QW-R502-871.A
5N65K
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-871.A
5N65K
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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www.unisonic.com.tw
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QW-R502-871.A
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