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DF08S

Description
1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size144KB,2 Pages
ManufacturerBWTECH
Websitehttp://www.bruckewell-semi.com
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DF08S Overview

1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

DF08S Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current1 A
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage800 V
Maximum non-repetitive peak forward current50 A
DF005S - DF10S
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
Pb / RoHS Free
SURFACE MOUNT
BRIDGE RECTIFIERS
DFS
0.205(5.2)
0.195(5.0)
~
0.049(1.25)
0.038(0.95)
~
0.410(10.4)
0.360(9.4)
0.346(8.8)
0.307(7.8)
0.255(6.5)
0.245(6.2)
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Terminals : Leads solderable per MIL-STD-202,
method 208 guaranteed
* Mounting position : Any
* Weight : 0.02 ounce, 0.4 gram
0.126(3.2)
0.102(2.6)
0.060(1.524)
0.040(1.016)
Max.0.009
(0.23)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified. 60 Hz, resistive or inductive load.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output
Rectified Current at Ta = 40
°C
Maximum Peak Forward Surge Current
Single half sine wave Superimposed
on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Instantaneous Forward Voltage
per element at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °
C
Ta = 125 °
C
SYMBOL
DF005S DF01S DF02S DF04S DF06S DF08S DF10S
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
I
2
t
V
F
I
R
I
R(H)
Cj
R
ѲJA
T
J
, T
STG
50
10
1.1
10
500
25
40
- 55 to + 150
A
A
2
S
V
µA
µA
pF
°C/W
°C
Typical Junction Capacitance per element (Note 1)
Typical Thermal Resistance (Note 2)
Junction and Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal Resistance from Junction to Ambient on P.C.B. with 0.5" x 0.5" (13mm x 13mm) Copper Pads.
Page 1 of 2

DF08S Related Products

DF08S DF005S DF01S DF02S DF04S DF10S
Description 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,400V V(RRM),SO BRIDGE RECTIFIER DIODE
state DISCONTINUED - ACTIVE - CONSULT MFR ACTIVE
Diode type bridge rectifier diode - bridge rectifier diode - bridge rectifier diode bridge rectifier diode

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