UNISONIC TECHNOLOGIES CO., LTD
UFZ34
Preliminary
Power MOSFET
28A, 60V N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC
UFZ34
is an N-channel Power MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance, high switching speed and low gate charge.
The UTC
UFZ34
is suitable for all commercial-industrial
applications, etc.
FEATURES
* R
DS(ON)
<0.042Ω @V
GS
=10V, I
D
=17A
* High switching speed
* Low gate charge
SYMBOL
D (2)
G (1)
S (3)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UFZ34L-TA3-T
UFZ34G-TA3-T
UFZ34L-TM3-T
UFZ34G-TM3-T
UFZ34L-TN3-R
UFZ34G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
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Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-900.a
UFZ34
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Preliminary
SYMBOL
V
DSS
V
GSS
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
RATINGS
UNIT
60
V
±20
V
28
A
T
C
=25°C
I
D
Continuous
Drain Current
T
C
=100°C
20
A
Pulsed (Note 1)
I
DM
112
A
Avalanche Current (Note 1)
I
AR
17
A
97
mJ
Single Pulsed (Note 2)
E
AS
Avalanche Energy
Repetitive (Note 1)
E
AR
6.8
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
5.0
V/ns
Power Dissipation
T
C
=25°C
P
D
68
W
Linear Derating Factor
0.46
W/°C
Junction Temperature
T
J
-55~+175
°C
Storage Temperature Range
T
STG
-55~+175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATING
Junction to Ambient
θ
JA
62
Junction to Case
θ
JC
3.3
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. L=670µH, I
AS
=17A, R
G
=25Ω, Starting T
J
=25°C.
3. I
SD
≤17A,
di/dt≤200A/µs, V
DD
≤BV
DSS
, Starting T
J
≤175°C.
UNIT
°C/W
°C/W
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VER.a
UFZ34
Preliminary
Power MOSFET
TYP MAX UNIT
V
µA
nA
nA
V
Ω
pF
pF
pF
30
6.7
12
5.1
30
22
30
28
100
1.3
63
130
95
200
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
nC
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
60
Drain-Source Leakage Current
I
DSS
V
DS
=60V, V
GS
=0V
Forward
V
GS
=+20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=17A
(Note 2)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=48V, I
D
=17A
Gate to Source Charge
Q
GS
(Note 4)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=17A, R
G
=13Ω,
R
D
=1.8Ω (Note 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
I
S
Current
Maximum Body-Diode Pulsed Current
I
SM
(Note 1)
Drain-Source Diode Forward Voltage
V
SD
T
J
=25°C, I
S
=17A, V
GS
=0V
(Note 2)
Body Diode Reverse Recovery Time
t
RR
T
J
=25°C, I
F
=17A,
Body Diode Reverse Recovery Charge
di/dt=100A/µs
Q
RR
(Note 2)
Intrinsic turn-on time is negligible
Forward Turn-On Time
t
ON
(turn-on is dominated by L
S
+L
D
)
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse width≤300µs, Duty cycle≤2%.
25
+100
-100
4.0
0.042
680
220
80
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3 of 6
QW-R502-900-.a
UFZ34
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
R
G
R
D
90%
V
GS
10V
V
DS
10%
DUT
V
GS
t
d(ON)
t
ON
t
R
t
d(OFF)
t
F
t
OFF
Resistive Switching Test Circuit
Resistive Switching Waveforms
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4 of 6
QW-R502-900-.a
UFZ34
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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5 of 6
QW-R502-900-.a
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