2N5877 datasheet, PDF - EEWORLD Datasheet

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2N5877: DescriptionPower Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size70KB，1 Pages; ManufacturerCentral Semiconductor

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2N5877 Overview

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

2N5877 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-204AA
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-based maximum capacity	300 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	4
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
Maximum rise time (tr)	700 ns
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Maximum off time (toff)	1800 ns
VCEsat-Max	3 V
Base Number Matches	1

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Tel: (631) 435-1110 • Fax: (631) 435-1824

2N5877 Related Products

	2N5877	2N5875	2N5876
Description	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Parts packaging code	TO-204AA	TO-204AA	TO-204AA
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Contacts	2	2	2
Reach Compliance Code	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	10 A	10 A	10 A
Collector-based maximum capacity	300 pF	500 pF	500 pF
Collector-emitter maximum voltage	60 V	60 V	80 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	4	4	4
JEDEC-95 code	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	PNP	PNP
Maximum power dissipation(Abs)	150 W	150 W	150 W
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum rise time (tr)	700 ns	700 ns	700 ns
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	4 MHz	4 MHz
Maximum off time (toff)	1800 ns	1800 ns	1800 ns
VCEsat-Max	3 V	3 V	3 V
Base Number Matches	1	1	1

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