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2N6653

Description
Power Bipolar Transistor, 20A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size66KB,1 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

2N6653 Overview

Power Bipolar Transistor, 20A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

2N6653 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)20 A
Collector-based maximum capacity300 pF
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment150 W
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)25 MHz
Maximum off time (toff)1850 ns
Maximum opening time (tons)250 ns
VCEsat-Max0.6 V
Base Number Matches1
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