MJE2955T
MJE2955T
General Purpose and Switching Applications
• DC Current Gain Specified to I
C
= 10 A
• High Current Gain Bandwidth Product : f
T
= 2MHz (Min.)
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
- 70
- 60
-5
- 10
-6
75
0.6
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
I
CEO
I
CEX1
I
CEX2
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector- Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= - 200mA, I
B
= 0
V
CE
= - 30V, I
B
= 0
V
CE
= - 70V, V
BE
(off) = 1.5V
V
CE
= - 70V, V
BE
(off) = 1.5V
@ T
C
= 150°C
V
EB
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 4A
V
CE
= - 4V, I
C
= - 10A
I
C
= - 4A, I
B
= - 0.4A
I
C
= - 10A, I
B
= - 3.3A
V
CE
= - 4V, I
C
= - 4A
V
CE
= - 10V, I
C
= - 500mA
2
20
5
Min.
-60
Max.
-700
-1
-5
-5
100
-1.1
-8
-1.8
V
V
V
MHz
Units
V
µA
mA
mA
mA
* Pulse test: PW≤300µs, duty cycle≤2% Pulse
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE2955T
Typical Characteristic
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
V
CE
= -2V
I
C
= 10I
B
h
FE
, DC CURRENT GAIN
100
-1
V
BE
(sat)
10
-0.1
V
CE
(sat)
1
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-100
105
90
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
75
-10
10
0
µ
DC
5m s
1m s
60
s
45
-1
30
15
-0.1
-1
-10
-100
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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not intended to be an exhaustive list of all such trademarks.
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2
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®
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®
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®
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. G
Microcontroller MCU
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